6inihi HPSI SiC tïpako angiangi Silicon Carbide Semi-tawai angiangi SiC

Ko nga tikanga tipu o naianei mo te SiC kotahi te karaihe ko te nuinga o enei e toru e whai ake nei: te tikanga wahanga wai, te tikanga whakangao matū matū teitei, me te tikanga kawe wahanga kohu tinana (PVT).I roto i a raatau, ko te tikanga PVT te hangarau tino rangahau me te pakeke mo te tipu o te karaihe kotahi o SiC, a ko ona uaua hangarau ko:

(1) SiC kotahi tioata i roto i te pāmahana teitei o 2300 ° C i runga ake i te ruma graphite kati ki te whakaoti i te "totoka - hau - totoka" tukanga recrystallization tahuri, he roa te huringa tupu, uaua ki te whakahaere, me te pängia ana ki microtubules, inclusions me etahi atu hapa.

(2) Silicon carbide kotahi karaihe, tae atu ki te neke atu i te 200 momo karaihe rereke, engari ko te hanga o te whanui kotahi noa te momo karaihe, he ngawari ki te whakaputa i te huringa momo karaihe i roto i te tipu o te tipu ka puta mai nga koha o te whakaurunga maha, te tukanga whakarite o te kotahi. he uaua ki te whakahaere i te pumau o te tukanga, hei tauira, te auraki o te momo 4H o naianei.

(3) Silicon carbide tupu karaihe kotahi mara waiariki i reira he rōnaki pāmahana, hua i roto i te tukanga tupu tioata reira ko te ahotea o roto taketake me te hua dislocations, koha me ētahi atu koha i awe.

(4) Silicon carbide tukanga tupu karaihe kotahi Me ki tino whakahaere i te whakataki o poke o waho, kia rite ki te whiwhi i te parakore tino tiketike karaihe āhua-waitara ranei te karaihe conductive directionally doped.Mo nga taputapu carbide silicon insulating e whakamahia ana i roto i nga taputapu RF, me tutuki nga taonga hiko ma te whakahaere i te iti rawa o te poke o te poke me nga momo hapa ira i roto i te karaihe.