Paepae uku SiC mō te Kaikawe Wafer me te Ātete ki te Pāmahana Teitei
Paepae Ukume Hiraka Warowaihā (Paepae SiC)
He wāhanga uku mahi-teitei e hangai ana ki te rauemi silicon carbide (SiC), i hangaia mō ngā tono ahumahi matatau pēnei i te hanga semiconductor me te hanga LED. Ko ōna mahi matua ko te mahi hei kawe wafer, hei papa tukanga whakairo, hei tautoko tukanga pāmahana-tiketike rānei, me te whakamahi i te kawe wera tino pai, te ātete pāmahana-tiketike, me te pumau matū hei whakarite i te ōritetanga o te tukanga me te hua o te hua.
Ngā Āhuatanga Matua
1. Mahi Wera
- Te Awe Wera Teitei: 140–300 W/m·K, he nui ake i te karāpeti tuku iho (85 W/m·K), e āhei ai te tere o te marara o te wera me te whakaiti i te ahotea wera.
- Tauwehenga Whānui Wera Iti: 4.0×10⁻⁶/℃ (25–1000℃), he tata te ōrite o te silicon (2.6×10⁻⁶/℃), e whakaiti ana i ngā mōrearea whakarerekētanga wera.
2. Ngā Āhuatanga Ā-Mīhini
- Kaha Teitei: Kaha piko ≥320 MPa (20℃), ātete ki te pēhanga me te pānga.
- Pakeke Teitei: Ko te pakeke Mohs he 9.5, tuarua noa iho i te taimana, he pai ake te ātete ki te kakahu.
3. Te Pūmautanga Matū
- Ātete ki te Waikura: Ātete ki ngā waikawa kaha (hei tauira, HF, H₂SO₄), he pai mō ngā taiao mahi whakairo.
- Kore-Aukume: Te ātete aukume ā-roto <1×10⁻⁶ emu/g, ka karo i te pokanoa ki ngā taputapu tika.
4. Te Manawanui Tino ki te Taiao
- Pakari-Mahana-Teitei: Te pāmahana mahi roa tae atu ki te 1600–1900℃; ātete wā poto tae atu ki te 2200℃ (taiao kore-hāora).
- Ātete ki te Ru Wera: Ka ātete ki ngā huringa pāmahana ohorere (ΔT >1000℃) me te kore e pakaru.
Ngā tono
| Mara Tono | Ngā horopaki motuhake | Uara Hangarau |
| Hanganga Ārahi-Haumaru | Te whakairo angiangi (ICP), te whakatakotoranga kiriata angiangi (MOCVD), te whakakanapa CMP | Mā te kawe wera teitei ka ōrite ngā āpure pāmahana; mā te whakawhānui wera iti ka whakaitihia te piko o te anga. |
| Te whakaputanga LED | Te tipu epitaxial (hei tauira, GaN), te tapahi wafer, te takai | Ka pehi i ngā momo hapa maha, ka whakarei ake i te whai huatanga me te roa o te ora o te rama LED. |
| Ahumahi Whakaahua-Voltaic | Ngā oumu whakahinuhinu angiangi silicon, ngā tautoko taputapu PECVD | Ka roa ake te ora o te taputapu nā te ātete ki te pāmahana teitei me te ru wera. |
| Reira me te Tirohanga | Ngā papa whakamatao taiaho mana-teitei, ngā tautoko pūnaha whatu | Mā te kawe wera teitei ka tere te marara o te wera, ka pumau ai ngā wāhanga whatu. |
| Ngā taputapu tātari | Ngā kaipupuri tauira TGA/DSC | Ka pai ake te tika o te ine mā te iti o te kaha wera me te tere o te urupare wera. |
Ngā Painga Hua
- Mahi Whānui: Ko te kawe wera, te kaha, me te ātete ki te waikura he nui ake i ngā uku alumina me te silicon nitride, e tutuki ai ngā tono whakahaere tino nui.
- Hoahoa Māmā: Te mātotoru o te 3.1–3.2 karamu/cm³ (40% o te maitai), e whakaiti ana i te kawenga ā-pūmau me te whakarei ake i te tika o te nekehanga.
- Te Roa o te Ora me te Pono: Neke atu i te 5 tau te roa o te ora ratonga i te 1600℃, ka whakaiti i te wā kore mahi me te whakaheke i ngā utu whakahaere mā te 30%.
- Whakaritenga: Tautoko ana i ngā āhuahanga uaua (hei tauira, ngā kapu momi porous, ngā paepae paparanga maha) me te hapa papatahi <15 μm mō ngā tono tino tika.
Ngā Whakatakotoranga Hangarau
| Kāwai Tawhā | Tohu |
| Ngā Āhuatanga Ā-tinana | |
| Kiato | ≥3.10 karamu/cm³ |
| Kaha Whakapiko (20℃) | 320–410 MPa |
| Te Arahi Wera (20℃) | 140–300 W/(m·K) |
| Tauwehenga Whānui Wera (25–1000℃) | 4.0×10⁻⁶/℃ |
| Ngā Āhuatanga Matū | |
| Ātete Waikawa (HF/H₂SO₄) | Kāore he waikura i muri i te rumakina 24 hāora |
| Te Tika o te Mīhini | |
| Papatahi | ≤15 μm (300×300 mm) |
| Te Pākari o te Mata (Ra) | ≤0.4 μm |
Ngā Ratonga a XKH
Ka whakaratohia e XKH ngā otinga ahumahi whānui e kapi ana i te whanaketanga ritenga, te miihini tika, me te whakahaere kounga pakari. Mō te whanaketanga ritenga, ka tukuna e ia ngā otinga rauemi parakore teitei (>99.999%) me te porous (30–50% porosity), me te whakatauira 3D me te whakaata hei arotau i ngā āhuahanga uaua mō ngā tono pēnei i ngā semiconductors me te rererangi. Ka whai te miihini tika i tētahi tukanga māmā: te tukatuka paura → te pēhi isostatic/maroke → te sintering 2200°C → te huri CNC/taimana → te tirotiro, te whakarite i te oro taumata nanometer me te manawanui āhua ±0.01 mm. Kei roto i te whakahaere kounga te whakamātautau tukanga katoa (te hanganga XRD, te hanganga moroiti SEM, te piko 3-ira) me te tautoko hangarau (te arotau tukanga, te kōrero 24/7, te tuku tauira 48-hāora), te tuku i ngā wāhanga pono, mahi teitei mō ngā hiahia ahumahi matatau.
Ngā Pātai Auau (FAQ)
1. P: He aha ngā ahumahi e whakamahi ana i ngā paepae uku silicon carbide?
A: E whakamahia whānuitia ana i roto i te hanga hiko haurua (te whakahaere i te anga), te pūngao o te rā (ngā tukanga PECVD), ngā taputapu hauora (ngā wāhanga MRI), me te rererangi (ngā wāhanga pāmahana teitei) nā te mea he tino ātete ki te wera me te pumau matū.
2. P: He aha te pai ake o te mahi a te silicon carbide i ngā paepae quartz/glass?
A: He ātete teitei ake ki ngā ru wera (tae atu ki te 1800°C, whakaritea ki te 1100°C o te kuata), kāore he pokanoa aukume, ā, he roa ake te ora (5+ tau, whakaritea ki te 6-12 marama o te kuata).
3. P: Ka taea e ngā paepae silicon carbide te tu atu ki ngā taiao waikawa?
Āe. Ātete ki te HF, H2SO4, me te NaOH me te <0.01mm te waikura ia tau, he mea tino pai mō te whakairo matū me te horoi i ngā papa.
4. P: He hototahi ngā paepae silicon carbide ki te aunoatanga?
Āe. I hangaia mō te tango korehau me te whakahaere karetao, me te papatahi o te mata <0.01mm hei ārai i te poke o ngā matūriki i roto i ngā papanga aunoa.
5. P: He aha te whakataurite i te utu me ngā rauemi tuku iho?
A: He nui ake te utu tīmatanga (3-5x te kuata) engari he 30-50% te iti iho o te TCO nā te roa o te ora, te iti o te wā kore mahi, me te penapena pūngao mai i te kawe wera pai ake.
