Tikanga CVD mō te whakaputa rauemi mata SiC parakore teitei i roto i te oumu hanga silicon carbide i te 1600℃
Te kaupapa mahi:
1. Te tuku i te pūmua. Ka whakaranua ngā hau pūtake silicon (hei tauira, SiH₄) me te hau pūtake waro (hei tauira, C₃H₈) kia rite te ōwehenga, ka tukuna ki roto i te rūma tauhohenga.
2. Te pirau i te pāmahana teitei: I te pāmahana teitei o te 1500~2300℃, ka puta mai i te pirau hau ngā ngota Si me te C hohe.
3. Tauhohenga mata: Ka whakatakotoria ngā ngota Si me C ki te mata o te papa hei hanga i tētahi paparanga tioata SiC.
4. Te tipu o te karaihe: Mā te whakahaere i te pikinga pāmahana, te rere o te hau me te pēhanga, ka tutuki ai te tipu ahunga i te tuaka c, i te tuaka a rānei.
Ngā tawhā matua:
· Pāmahana: 1600~2200℃ (>2000℃ mō te 4H-SiC)
· Pēhanga: 50~200mbar (pēhanga iti hei whakaiti i te hanganga hau)
· Ōwehenga hau: Si/C≈1.0~1.2 (hei karo i ngā hapa whakarei ake i te Si, i te C rānei)
Ngā āhuatanga matua:
(1) Te kounga o te karaihe
He iti te mātotoru o te hapa: te mātotoru o ngā ngongo iti < 0.5cm⁻², te mātotoru o te nekehanga < 10⁴ cm⁻².
Mana whakahaere momo polycrystalline: ka taea te whakatipu 4H-SiC (matua), 6H-SiC, 3C-SiC me ētahi atu momo tioata.
(2) Te mahi a ngā taputapu
Te pumau o te pāmahana teitei: te whakamahana ātete, te whakamahana ātete rānei, te pāmahana >2300℃.
Whakahaere ōritetanga: te piki me te heke o te pāmahana ±5℃, te tere tipu 10~50μm/h.
Pūnaha hau: Mita rere papatipu tino tika (MFC), parakore hau ≥99.999%.
(3) Ngā painga hangarau
Teitei o te parakore: Te kukū o te poke papamuri <10¹⁶ cm⁻³ (N, B, me ētahi atu).
Rahi nui: Tautoko i te tipu o te papa SiC 6 "/8".
(4) Te whakapaunga pūngao me te utu
Te nui o te whakapaunga pūngao (200~500kW·h mō ia oumu), e 30%~50% o te utu whakaputa o te papa SiC.
Ngā tono matua:
1. Papa hiko haurua-ā-hiko: Ngā MOSFET SiC mō te hanga waka hiko me ngā kaitahuri photovoltaic.
2. Pūrere RF: te papa epitaxial teihana turanga 5G GaN-on-SiC.
3. Ngā taputapu taiao tino kino: ngā pūoko pāmahana teitei mō ngā tipu hiko rererangi me ngā tipu hiko karihi.
Ngā whakatakotoranga hangarau:
| Whakatakotoranga | Ngā Taipitopito |
| Ngā Ahu (R × W × T) | 4000 x 3400 x 4300 mm, ka taea rānei te whakarite |
| Te whānui o te rūma oumu | 1100mm |
| Te kaha utaina | 50kg |
| Te tohu korehau rohe | 10-2Pa (2 hāora i muri i te tīmatanga o te papu ngota) |
| Te tere pikinga o te pēhanga o te rūma | ≤10Pa/h (i muri i te whakapūkara) |
| Te whiu hiki i te taupoki oumu o raro | 1500mm |
| Tikanga whakamahana | Whakamahana hiko |
| Te pāmahana mōrahi i roto i te oumu | 2400°C |
| Pūnaha hiko whakamahana | 2X40kW |
| Ine pāmahana | Te ine pāmahana pūwero-rua-tae |
| Awhe pāmahana | 900~3000℃ |
| Te tika o te whakahaere pāmahana | ±1°C |
| Awhe pēhanga whakahaere | 1~700mbar |
| Te Tika o te Whakahaere Pēhanga | 1~5mbar ±0.1mbar; 5~100mbar ±0.2mbar; 100~700mbar ±0.5mbar |
| Tikanga uta | Te utaina iti iho; |
| Whirihoranga kōwhiringa | Pūwāhi ine pāmahana takirua, te tango i te forklift. |
Ngā Ratonga XKH:
Ka whakaratohia e XKH ngā ratonga huringa-katoa mō ngā oumu CVD silicon carbide, tae atu ki te whakaritenga taputapu (te hoahoa rohe pāmahana, te whirihoranga pūnaha hau), te whakawhanaketanga tukanga (te whakahaere tioata, te arotau hapa), te whakangungu hangarau (te whakahaere me te tiaki) me te tautoko i muri i te hoko (te tuku wāhanga e manawapa ana mō ngā wāhanga matua, te tātaritanga mamao) hei āwhina i ngā kiritaki ki te whakatutuki i te hanga papatipu SiC kounga teitei. Ā, ka whakaratohia hoki ngā ratonga whakapai ake tukanga hei whakapai tonu i te hua tioata me te whai huatanga o te tipu.





