Te papanga
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3inihi Dia76.2mm sapphire wafer 0.5mm te matotoru C-rererangi SSP
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4inihi SiC Epi wafer mo MOS SBD ranei
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Kiriata Angiangi SiO2 Oxide Ngaariki Silicon wafer 4inihi 6inihi 8inihi 12inihi
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2inihi SiC ingot Dia50.8mmx10mmt 4H-N monocrystal
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Silicon-On-Insulator Substrate SOI angiangi e toru nga paparanga mo Microelectronics me te Reo Irirangi
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Insulator angiangi SOI i runga i nga angiangi angiangi 8-inihi me te 6-inihi SOI (Silicon-On-Insulator)
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4 inihi SiC Wafers 6H Semi-Insulating SiC Substrates prime, rangahau, me te reke
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6inihi HPSI SiC tïpako angiangi Silicon Carbide Semi-tawai angiangi SiC
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4inihi Semi-whakakino SiC angiangi HPSI SiC tïpako Prime Production kōeke
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3inihi 76.2mm 4H-Semi SiC tïpako angiangi Silicon Carbide Wafers SiC whakakino
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3inihi Dia76.2mm SiC substrates HPSI Prime Research me te kōeke Dummy
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4H-semi HPSI 2inihi SiC tïpako angiangi Production Dummy Koeke Rangahau