Te papanga
-
Silicon Carbide SiC Ingot 6inihi N momo Dummy / te matotoru kōeke matua ka taea te whakarite
-
6 i roto i te Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
-
SiC Ingot 4H momo Dia 4inihi 6inihi Te Matotoru 5-10mm Rangahau / Koeke Dummy
-
3 inihi Te Pure Teitei (Kaore i Kore) Hiriona Waaporo Angiangi Waahanga Waahanga Sic Substrates (HPSl)
-
6inihi hapaira Boule hapaira he karaihe kotahi Al2O3 99.999%
-
Sic Substrate Silicon Carbide Wafer 4H-N Momo Maamaa Teitei Aatete Te Waikura Whakaoranga Tuatahi.
-
2inihi Silicon Carbide Wafer 6H-N Momo Prime Grade Rangahau Tohu Dummy Grade 330μm 430μm Matotoru
-
2inihi hiraka carbide tïpako 6H-N rua-taha oro diameter 50.8mm production kōeke rangahau kōeke
-
momo-p 4H/6H-P 3C-N TYPE SIC tïpako 4inihi 〈111〉± 0.5°Kore MPD
-
Tïpako SiC P-momo 4H/6H-P 3C-N 4inihi me te matotoru o te 350um Koeke Whakaputa Koeke Dummy
-
4H/6H-P 6inihi SiC angiangi Kore MPD kōeke Production Grade Dummy Kōeke
-
P-momo SiC angiangi 4H/6H-P 3C-N 6inihi te matotoru 350 μm me te Takotoranga Papatahi Tuatahi