Te papanga
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Silicon Carbide SiC Ingot 6inihi N momo Dummy / te matotoru kōeke matua ka taea te whakarite
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SiC Ingot 4H-N momo Koeke Dummy 2inihi 3inihi 4inihi 6inihi te matotoru:＞10mm
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HPSI SiC wafer dia:3inihi te matotoru:350um± 25 µm mo te Hiko Hiko
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3inihi Tino parakore Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Koeke Pirimia
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Sic Substrate Silicon Carbide Wafer 4H-N Momo Maamaa Teitei Aatete Te Waikura Whakaoranga Tuatahi
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2inihi 6H-N Silicon Carbide Substrate Sic Wafer Rua Oro Ake Prime Grade Mos Grade
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2inihi Silicon Carbide Wafer 6H-N Momo Prime Grade Rangahau Tohu Dummy Grade 330μm 430μm Matotoru
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2inihi hiraka carbide tïpako 6H-N rua-taha oro diameter 50.8mm production kōeke rangahau kōeke
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momo-p 4H/6H-P 3C-N MOMO SIC tïpako 4inihi 〈111〉± 0.5°Kore MPD
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Tïpako SiC P-momo 4H/6H-P 3C-N 4inihi me te matotoru o te 350um Koeke Whakaputa Koeke Dummy
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4H/6H-P 6inihi SiC angiangi Kore MPD kōeke Production Grade Dummy Kōeke
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P-momo SiC angiangi 4H/6H-P 3C-N 6inihi te matotoru 350 μm me te Takotoranga Papatahi Tuatahi