Te atete Silicon carbide oumu karaihe roa e tipu ana 6/8/12inihi SiC ingot crystal PVT tikanga

Whakaahuatanga Poto:

Silicon carbide resistance tupu oumu (tikanga PVT, tikanga whakawhiti kohu tinana) ko te taputapu matua mo te tipu o te silicon carbide (SiC) karaihe kotahi i te pāmahana teitei sublimation-recrystallization parau tumu. Ka whakamahia e te hangarau te whakamahana whakawera (graphite heating body) ki te whakaheke i te SiC raw rauemi i te pāmahana teitei o 2000 ~ 2500 ℃, me te rerystallize i roto i te rohe pāmahana iti (karaihe purapura) ki te hanga i te kiripiri kotahi SiC-kounga teitei (4H / 6H-SiC). Ko te tikanga PVT ko te tikanga auraki mo te hanga papatipu o nga taputapu SiC o te 6 inihi me raro, e whakamahia nuitia ana i roto i te whakarite tïpako o nga semiconductors hiko (pēnei i nga MOSFET, SBD) me nga taputapu auau reo irirangi (GaN-on-SiC).

Tukuna he imeera ki a matou

Taipitopito Hua

Tohu Hua

Tikanga mahi:

1. Uta rawa rawa: te paura SiC parakore (poraka ranei) ka whakatakotoria ki raro o te ipu graphite (rohe pāmahana teitei).

2. Te taiao korehau: whakakorua i te ruma oumu (<10⁻³ mbar) ka tukuna ranei te hau koretake (Ar).

3. Te whakamahana teitei o te pāmahana: te whakamahana whakawera ki te 2000~2500 ℃, te pirau SiC ki te Si, Si₂C, SiC₂ me etahi atu waahanga hau.

4. Te tuku wahanga hau: ka peia e te rōnaki pāmahana te tiritiri o te rauemi wahanga hau ki te rohe pāmahana iti (mutunga kākano).

5. Te tipu o te tioata: Ko te wahanga hau ka huri ki runga i te mata o te Kiriata Kakano, ka tipu ki te ahunga whakamua i te tuaka-C, i te tuaka-A ranei.

Tawhā matua:

1. Rōnaki pāmahana: 20~50 ℃/cm (whakahaere te tere tipu me te kiato koha).

2. Te pehanga: 1 ~ 100mbar (te iti o te pehanga ki te whakaiti i te whakauru poke).

3.Te tipu tipu: 0.1 ~ 1mm / h (e pa ana ki te kounga o te karaihe me te pai o te whakaputa).

Āhuatanga matua:

(1) Kounga tioata
He iti te kiato hapa: kiato microtubule <1 cm⁻², kiato wehenga 10³~10⁴ cm⁻² (na roto i te arotautanga purapura me te mana whakahaere).

Mana momo polycrystalline: ka taea te tipu 4H-SiC (auraki), 6H-SiC, 4H-SiC owehenga> 90% (me tika te whakahaere i te rōnaki pāmahana me te wahanga hau stoichiometric ōwehenga).

(2) Te mahi taputapu
Pūmautanga teitei o te pāmahana: graphite whakawera tinana pāmahana> 2500 ℃, te tinana oumu tango maha-papanga hoahoa whakamatao (pērā i te graphite ite + koti wai-matao).

Mana orite: Axial/radial pāmahana rerekē o ± 5 ° C whakarite kia rite te karaihe diameter (6-inihi te matotoru tïpako ine ine <5%).

Te tohu o te automation: Te punaha whakahaere PLC whakauru, te aro turuki i te waa-waahi o te pāmahana, te pehanga me te tere tipu.

(3) Nga painga hangarau
Te whakamahi rauemi teitei: te tere o te whakawhiti rauemi mata> 70% (he pai ake i te tikanga CVD).

Hototahi rahi nui: 6-inihi hanga papatipu kua tutuki, 8-inihi kei te waahanga whanaketanga.

(4) Te whakapau kaha me te utu
Ko te kohi kaha o te oumu kotahi ko 300 ~ 800kW · h, kaute mo te 40% ~ 60% o te utu hanga o SiC tïpako.

He nui te haumi taputapu (1.5M 3M mo ia waahanga), engari he iti ake te utu o te taputapu taputapu i te tikanga CVD.

Nga tono matua:

1. Hikohiko hiko: SiC MOSFET tïpako mo te hiko waka hiko me te photovoltaic inverter.

2. Nga taputapu Rf: 5G teihana turanga GaN-on-SiC epitaxial substrate (te nuinga 4H-SiC).

3. Nga taputapu taiao tino nui: te teitei o te wera me te teitei o te pehanga mo te aerospace me nga taputapu hiko karihi.

Tawhā Hangarau:

Whakatakotoranga	Nga korero
Ahu (L × W × H)	2500 × 2400 × 3456 mm, whakarite ranei
Te Taonenga Whakawhiti	900 mm
Pehenga Korehau Rawa	6 × 10⁻⁴ Pa (i muri i te 1.5h o te korehau)
Reanga Leakage	≤5 Pa/12h (tunua)
Te Taone o te Porohurihuri	50 mm
Tere Hurihuri	0.5–5 rpm
Tikanga Whakawera	Whakawera whakawera hiko
Te Mahana Umu Morahi	2500°C
Te Mana Whakawera	40 kW × 2 × 20 kW
Te Ine Maama	Pyrometer infrared tae-rua
Awhe Pawera	900–3000°C
Te Tikanga o te Pamahana	±1°C
Awhe Pehenga	1–700 mbar
Te Tikanga Mana Mana	1–10 mbar: ±0.5% FS; 10–100 mbar: ±0.5% FS; 100–700 mbar: ±0.5% FS
Momo Mahi	Uta raro, kōwhiringa haumaru ā-ringa/aunoa
Āhuatanga Kōwhiringa	Te inenga pāmahana rua, nga rohe whakamahana maha

Ratonga XKH:

Ka whakaratohia e XKH te ratonga tukanga katoa o te oumu SiC PVT, tae atu ki te whakaritenga taputapu (hoahoa papa waiariki, te whakahaere aunoa), te whakawhanaketanga tukanga (te mana o te kirikiri ahua, te arotautanga kohakore), te whakangungu hangarau (mahi me te tiaki) me te tautoko i muri i te hoko (whakakapi i nga waahanga graphite, te whakamaarama o te waahi waiariki) hei awhina i nga kaihoko ki te whakatutuki i te kounga teitei o te hanga karaihe kiripiri sic. Ka whakarato hoki matou i nga ratonga whakamohoatanga tukanga ki te whakapai tonu i nga hua karaihe me te pai o te tipu, me te wa arahi mo te 3-6 marama.