Te oumu karaihe roa ātete ki te silicon carbide e tipu ana i te tikanga PVT karaihe SiC ingot 6/8/12inihi inihi

Whakaahuatanga Poto:

Ko te oumu whakatipu ātete ki te silicon carbide (tikanga PVT, tikanga whakawhiti kohu ā-tinana) he taputapu matua mō te whakatipu i te tioata kotahi silicon carbide (SiC) mā te kaupapa whakakoi-whakahou pāmahana teitei. Ka whakamahia e te hangarau te whakamahana ātete (tinana whakamahana graphite) hei whakakoi i te rauemi mata SiC i te pāmahana teitei o te 2000~2500℃, ā, ka whakakoi anō i te rohe pāmahana iti (kiriata purapura) hei hanga i te tioata kotahi SiC kounga teitei (4H/6H-SiC). Ko te tikanga PVT te tukanga matua mō te whakaputa papatipu o ngā papa SiC 6 inihi me raro iho, e whakamahia whānuitia ana i roto i te whakarite papa o ngā semiconductors hiko (pēnei i ngā MOSFET, SBD) me ngā taputapu auau reo irirangi (GaN-on-SiC).


Ngā Āhuatanga

Te kaupapa mahi:

1. Te utaina o ngā rauemi mata: paura SiC parakore teitei (poraka rānei) kua whakatakotoria ki raro i te para karāpeti (rohe pāmahana teitei).

 2. Taiao korehau/pūmau: whakakorengia te rūma oumu (<10⁻³ mbar) tukuna rānei he hau korehau (Ar).

3. Te whakakorikori pāmahana teitei: te ātete ki te whakamahana ki te 2000~2500℃, te wetewete i te SiC ki te Si, te Si₂C, te SiC₂ me ētahi atu wāhanga hau.

4. Te tuku āhua hau: ka akiakihia e te pikinga pāmahana te horapa o te rauemi āhua hau ki te rohe pāmahana iti (te pito purapura).

5. Te tipu o te karaihe: Ka whakakā anō te āhua hau i runga i te mata o te karaihe purapura, ā, ka tipu haere i te tuaka-C, i te tuaka-A rānei.

Ngā tawhā matua:

1. Te pikinga pāmahana: 20~50℃/cm (whakahaere i te tere tipu me te kiato o te hapa).

2. Pēhanga: 1~100mbar (pēhanga iti hei whakaiti i te whakaurunga o te poke).

3. Te tere tipu: 0.1~1mm/h (ka pā ki te kounga o te karaihe me te whai huatanga o te whakaputa).

Ngā āhuatanga matua:

(1) Te kounga o te karaihe
He iti te mātotoru o te hapa: he iti te mātotoru o ngā ngongo iti iho i te 1 cm⁻², he iti te mātotoru o te nekehanga o te kiri 10³~10⁴ cm⁻² (mā te arotautanga o te purapura me te whakahaere tukanga).

Mana whakahaere momo polycrystalline: ka taea te tipu 4H-SiC (matua), 6H-SiC, 4H-SiC ōwehenga >90% (me whakahaere tika te pikinga pāmahana me te ōwehenga stoichiometric o te wāhanga hau).

(2) Te mahi a ngā taputapu
Te pumau o te pāmahana: te pāmahana o te tinana wera karāpeti >2500℃, ka whakamahia e te tinana oumu he hoahoa whakamarumaru maha-paparanga (pēnei i te huruhuru karāpeti + te koti whakamatao-wai).

Whakahaere ōritetanga: Mā te piki me te heke o te pāmahana tuaka/whāiti o te ±5 ° C ka whakarite kia ōrite te whānui o te karaihe (6-inihi te matotoru o te papa <5%).

Te taumata o te aunoatanga: Pūnaha whakahaere PLC whakauru, te aroturukitanga wā-tūturu o te pāmahana, te pēhanga me te tere tipu.

(3) Ngā painga hangarau
Te whakamahinga rauemi teitei: te tere tahuritanga rauemi mata >70% (pai ake i te tikanga CVD).

Hototahi rahi nui: kua tutuki te hanga papatipu 6-inihi, kei te wāhanga whanaketanga te 8-inihi.

(4) Te whakapaunga pūngao me te utu
Ko te kaha e pau ana i te oumu kotahi he 300~800kW·h, e 40%~60% o te utu whakaputa o te papa SiC.

He nui te haumitanga ki ngā taputapu (1.5M 3M mō ia waeine), engari he iti iho te utu o te papa waeine i te tikanga CVD.

Ngā tono matua:

1. Hikohiko mana: He papa SiC MOSFET mō te inverter waka hiko me te inverter photovoltaic.

2. Ngā taputapu RF: te papa epitaxial GaN-on-SiC teihana turanga 5G (ko te nuinga he 4H-SiC).

3. Ngā taputapu taiao tino kino: ngā pūoko pāmahana me te pēhanga teitei mō ngā taputapu rererangi me te pūngao karihi.

Ngā tawhā hangarau:

Whakatakotoranga Ngā Taipitopito
Ngā Ahu (R × W × T) 2500 × 2400 × 3456 mm, whakaritea rānei
Diameter o te Para 900 mm
Pēhanga Korehau Tino Pai 6 × 10⁻⁴ Pa (whai muri i te 1.5 hāora o te korehau)
Te Auau o te Tūtaki ≤5 Pa/12h (tunua ki waho)
Te Diameter o te Pou Hurihanga 50 mm
Tere Hurihanga 0.5–5 rpm
Tikanga Whakamahana Te whakamahana ātete hiko
Te Pāmahana o te Ouma Mōrahi 2500°C
Mana Whakamahana 40 kW × 2 × 20 kW
Ine i te pāmahana Ine pūwero whero-rua-tae
Awhe Pāmahana 900–3000°C
Te Tika o te Pāmahana ±1°C
Awhe Pēhanga 1–700 mbar
Te Tika o te Whakahaere Pēhanga 1–10 mbar: ±0.5% FS;
10–100 mbar: ±0.5% FS;
100–700 mbar: ±0.5% FS
Momo Mahi Te uta raro, ngā kōwhiringa haumaru ā-ringa/aunoa
Ngā Āhuatanga Kōwhiringa Ine pāmahana takirua, rohe whakamahana maha

 

Ngā Ratonga XKH:

Ka whakaratohia e XKH te ratonga tukanga katoa o te oumu SiC PVT, tae atu ki te whakaritenga taputapu (te hoahoa mara wera, te whakahaere aunoa), te whakawhanaketanga tukanga (te whakahaere āhua karaihe, te arotau hapa), te whakangungu hangarau (te whakahaere me te tiaki) me te tautoko muri-hoko (te whakakapinga wāhanga karāpiti, te whakatikatika mara wera) hei āwhina i ngā kiritaki ki te whakatutuki i te whakaputanga papatipu karaihe sic kounga teitei. Ka whakaratohia hoki e mātou ngā ratonga whakapai ake tukanga hei whakapai tonu i te hua karaihe me te whai huatanga o te tipu, me te wā arahi noa o te 3-6 marama.

Kauwhata Taipitopito

Omu karaihe roa ātete ki te karawiti silicon 6
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Omu karaihe roa ātete ki te karawiti silicon 1

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