SiC
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer mo MOS SBD ranei
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SiC Epitaxial Wafer mo nga Pūrere Hiko - 4H-SiC, N-momo, Iti Kohakore Kiato
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4H-N Momo SiC Epitaxial Wafer Ngaohiko Teitei Auautanga Nui
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3 inihi Te Pure Teitei (Kaore i Kore) Silicon Carbide Wafers Waahanga Sic Substrates (HPSl)
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4H-N 8 inihi SiC tïpako angiangi Silicon Carbide Dummy Rangahau māka 500um matotoru
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4H-N/6H-N SiC Wafer Reasearch production Dummy grade Dia150mm Silicon carbide tïpako
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Au pani angiangi, angiangi hapaira, angiangi hiona, SiC angiangi, 2inihi 4inihi 6inihi, te matotoru whakakikorua koura 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C momo 2inihi 3inihi 4inihi 6inihi 8inihi
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2 inihi Sic silicon carbide tïpako 6H-N Momo 0.33mm 0.43mm whakakorikori taha-rua Ko te kawe waiariki teitei te kohi hiko iti
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SiC tïpako 3inihi 350um matotoru HPSI momo Prime Grade Dummy kōeke
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Silicon Carbide SiC Ingot 6inihi N momo Dummy / te matotoru kōeke matua ka taea te whakarite
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6 i roto i te Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade