SiC
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6 i roto i te Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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SiC Ingot 4H momo Dia 4inihi 6inihi Te Matotoru 5-10mm Rangahau / Koeke Dummy
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3 inihi Te Pure Teitei (Kaore i Kore) Hiriona Waaporo Angiangi Waahanga Waahanga Sic Substrates (HPSl)
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Sic Substrate Silicon Carbide Wafer 4H-N Momo Maamaa Teitei Aatete Te Waikura Whakaoranga Tuatahi.
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2inihi Silicon Carbide Wafer 6H-N Momo Prime Grade Rangahau Tohu Dummy Grade 330μm 430μm Matotoru
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2inihi hiraka carbide tïpako 6H-N rua-taha oro diameter 50.8mm production kōeke rangahau kōeke
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N-Momo SiC Composite Substrates Dia6inch Te kounga teitei monocrystaline me te tïpako kounga iti
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Waahanga SiC Composite Substrates Dia2inihi 4inihi 6inihi 8inihi HPSI
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N-Momo SiC i runga i te Si Composite Substrates Dia6inihi
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SiC substrate Dia200mm 4H-N me HPSI Silicon carbide
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3inihi SiC tïpako Production Dia76.2mm 4H-N
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Tïpako SiC P me D kōeke Dia50mm 4H-N 2inihi