SiC
-
12 inihi te whānui o te papa SIC silicon carbide prime grade 300mm te rahi nui 4H-N. He pai mō te whakamarara wera o te taputapu mana nui.
-
Papa whakarewa SiC silicon carbide 8 inihi momo 4H-N momo 0.5mm taumata whakaputa taumata rangahau kua orohia ritenga
-
HPSI SiC wafer diameter: 3inihi te matotoru: 350um± 25 µm mō te Hikohiko Mana
-
3inihi te parakore teitei, te haurua-whakamātao (HPSI) te papa SiC 350um te karaehe Tauira Tuatahi
-
Papa SiC momo-P SiC wafer Dia2inihi hua hou
-
Ngā Waferi SiC Silicon Carbide 8inihi 200mm Momo 4H-N Tau whakaputanga matotoru 500um
-
2Inihi 6H-N Silicon Carbide Substrate Sic Wafer Takirua Whakakanapahia te Arataki Matua orohia te Mos Grade
-
Wafer 12-Inihi 4H-SiC mō ngā karāhe AR
-
HPSI SiC Wafer ≥90% Whakawhiti Matapihi mō ngā Mōhiti AI/AR
-
Papa Hanga-Hau-Whakamaroke Silicon Carbide (SiC) Tino-Parakore mō ngā Karāhe Ar
-
Ngā Wafer Epitaxial 4H-SiC mō ngā MOSFET Ngaohiko Tino-Teitei (100–500 μm, 6 inihi)
-
SICOI (Silicon Carbide on Insulator) Wafers SiC Kiriata ON Silicon