SiC
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12 inihi SIC tïpako silicon carbide kōeke matua diameter 300mm rahi nui 4H-N He pai mo te taputapu hiko teitei tohanga wera
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8 inihi SiC silicon carbide angiangi 4H-N momo 0.5mm production kōeke rangahau kōeke ritenga oro tïpako
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HPSI SiC wafer dia:3inihi te matotoru:350um± 25 µm mo te Hiko Hiko
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3inihi Tino parakore Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Koeke Pirimia
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P-momo SiC tïpako SiC angiangi Dia2inihi hua hou
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8inihi 200mm Silicon Carbide SiC Wafers 4H-N momo Koeke whakaputa 500um te matotoru
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2inihi 6H-N Silicon Carbide Substrate Sic Wafer Rua Oro Whakahaere Prime Grade Mos Grade
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SiC Substrate SiC Epi-wafer conductive/semi momo 4 6 8 inihi
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SiC Epitaxial Wafer mo nga Pūrere Hiko - 4H-SiC, N-momo, Iti Kohakore Kiato
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4H-N Momo SiC Epitaxial Wafer Ngaohiko Teitei Auautanga Nui
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3 inihi Te Pure Teitei (Kaore i Kore) Silicon Carbide Wafers Waahanga Sic Substrates (HPSl)
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4H-N 8 inihi SiC tïpako angiangi Silicon Carbide Dummy Rangahau māka 500um matotoru