SiC
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4H-N 8 inihi SiC tïpako angiangi Silicon Carbide Dummy Rangahau kōeke 500um matotoru
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4H-N/6H-N SiC Wafer Reasearch production Dummy grade Dia150mm Silicon carbide tïpako
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8inihi 200mm Silicon Carbide SiC Wafers 4H-N momo Koeke whakaputa 500um te matotoru
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HPSI SiC wafer dia:3inihi te matotoru:350um± 25 µm mo te Hiko Hiko
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8 inihi SiC silicon carbide angiangi 4H-N momo 0.5mm production kōeke rangahau kōeke ritenga oro tïpako
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3inihi Tino parakore Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Koeke Pirimia
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P-momo SiC tïpako SiC angiangi Dia2inihi hua hou
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2inihi 6H-N Silicon Carbide Substrate Sic Wafer Rua Oro Whakahaere Prime Grade Mos Grade
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SiC silicon carbide angiangi SiC angiangi 4H-N 6H-N HPSI（Te parakore Semi-Insulating ） 4H/6H-P 3C -n momo 2 3 4 6 8inihi e waatea ana
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2 inihi Sic silicon carbide tïpako 6H-N Momo 0.33mm 0.43mm whakakorikori taha-rua Ko te kawe waiariki teitei te kohi hiko iti
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SiC tïpako 3inihi 350um matotoru HPSI momo Prime Grade Dummy kōeke
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Silicon Carbide SiC Ingot 6inihi N momo Dummy / te matotoru kōeke matua ka taea te whakarite