SiC
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4H-N 8 inihi SiC tïpako angiangi Silicon Carbide Dummy Rangahau māka 500um matotoru
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4H-N/6H-N SiC Wafer Reasearch production Dummy grade Dia150mm Silicon carbide tïpako
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12 inihi SIC tïpako silicon carbide kōeke matua diameter 300mm rahi nui 4H-N He pai mo te taputapu hiko teitei tohanga wera
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HPSI SiC wafer dia:3inihi te matotoru:350um± 25 µm mo te Hiko Hiko
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8 inihi SiC silicon carbide angiangi 4H-N momo 0.5mm production kōeke rangahau kōeke ritenga oro tïpako
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3inihi Tino parakore Semi-Insulating （HPSI）SiC wafer 350um Dummy grade Koeke Pirimia
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P-momo SiC tïpako SiC angiangi Dia2inihi hua hou
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8inihi 200mm Silicon Carbide SiC Wafers 4H-N momo Koeke whakaputa 500um te matotoru
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2inihi 6H-N Silicon Carbide Substrate Sic Wafer Rua Oro Whakahaere Prime Grade Mos Grade
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3 inihi Te Pure Teitei (Kaore i Kore) Silicon Carbide Wafers Waahanga Sic Substrates (HPSl)
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Au pani angiangi, angiangi hapaira, angiangi hiona, SiC angiangi, 2inihi 4inihi 6inihi, te matotoru whakakikorua koura 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C momo 2inihi 3inihi 4inihi 6inihi 8inihi