Hua
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Tikanga tukatuka mata o titanium-doped sapphire karaihe taiaho rakau
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8inihi 200mm Silicon Carbide SiC Wafers 4H-N momo Koeke whakaputa 500um te matotoru
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2inihi 6H-N Silicon Carbide Substrate Sic Wafer Rua Oro Whakahaere Prime Grade Mos Grade
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200mm 8inihi GaN i runga i te sapphire Epi-layer wafer substrate
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Sapphire tube KY Tikanga marama katoa Ka taea te whakarite
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6 Inihi Whakaheke SiC Composite Substrate 4H Diameter 150mm Ra≤0.2nm Warp≤35μm
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Infrared Nanosecond Laser Drilling taputapu mo Glass Drilling thickness≤20mm
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Microjet hangarau taiaho taputapu angiangi tapahi SiC tukatuka rauemi
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Silicon carbide taimana mīhini tapahi waea 4/6/8/12 inihi SiC tukatuka ingot
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Tikanga CVD mo te whakaputa i nga rawa SiC parakore teitei i roto i te oumu synthesis carbide silicon i te 1600 ℃
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Te atete Silicon carbide oumu karaihe roa e tipu ana 6/8/12inihi SiC ingot crystal PVT tikanga
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Teihana rua miihini tapawha monocrystalline silicon rod tukatuka 6/8/12 inihi papatahi mata Ra≤0.5μm