Papa SiC momo-P SiC wafer Dia2inihi hua hou

Ko ngā papa hiko silicon carbide momo-P e whakamahia whānuitia ana hei hanga i ngā taputapu hiko, pērā i ngā transistors Insulate-Gate Bipolar (IGBT).

IGBT= MOSFET+BJT, he pana whakakā-whakaweto. MOSFET=IGFET(ngūpū pānga mara haurua whakarewa waikura, he transistor pānga mara momo kuaha whakamātao rānei). BJT(Bipolar Junction Transistor, e mōhiotia ana ko te transistor), ko te tikanga o te bipolar he rua ngā momo kawe irahiko me ngā kaikawe poka e uru ana ki te tukanga kawe hiko e mahi ana, ko te tikanga he hononga PN e uru ana ki te kawe hiko.

Ko te angaanga momo-p silicon carbide (SiC) 2-inihi kei roto i te momo-p 4H, momo-6H rānei. He rite ōna āhuatanga ki ngā angaanga momo-n silicon carbide (SiC), pērā i te ātete pāmahana teitei, te kawe wera teitei, me te kawe hiko teitei. He mea noa te whakamahi i ngā papa SiC momo-p i roto i te hanga taputapu hiko, inā koa mō te hanga transistors bipolar kuaha-whakamātao (IGBT). Ko te hoahoa o ngā IGBT he tikanga kei roto ko ngā hononga PN, he pai te SiC momo-p mō te whakahaere i te whanonga o te taputapu.