He whakarāpopototanga o te wafer SiC
Ngā papa angiangi silicon carbide (SiC)kua noho hei papa whiriwhiri mō ngā hikohiko mana-teitei, auau-teitei, me te pāmahana-teitei puta noa i ngā rāngai motuka, pūngao whakahou, me te rererangi. Kei roto i tā mātou putea ngā momo matua me ngā kaupapa tāpiringa—4H (4H-N) kua tāpirihia ki te hauota, te haurua-whakamātao parakore-teitei (HPSI), 3C (3C-N) kua tāpirihia ki te hauota, me te momo-p 4H/6H (4H/6H-P)—e tukuna ana i roto i ngā taumata kounga e toru: PRIME (ngā papa kua oti te whakakanapa, te taumata taputapu), DUMMY (kua pania, kāore rānei i whakakanapahia mō ngā whakamātautau tukanga), me te RANGAHAU (ngā paparanga epi ritenga me ngā kōtaha tāpiringa mō te R&D). Ko ngā diameter o te wafer e 2″, 4″, 6″, 8″, me te 12″ kia pai ai mō ngā taputapu tawhito me ngā papanga matatau. Ka whakaratohia hoki e mātou ngā boule monocrystalline me ngā tioata purapura kua whakaritea tika hei tautoko i te tipu tioata o roto.
Kei roto i ā mātou papa 4H-N ngā mātotoru kawe mai i te 1×10¹⁶ ki te 1×10¹⁹ cm⁻³ me ngā ātete o te 0.01–10 Ω·cm, e tuku ana i te nekehanga irahiko me ngā mara pakaru pai rawa atu i runga ake i te 2 MV/cm—he mea pai mō ngā diode Schottky, MOSFET, me JFET. Ko ngā papa HPSI e neke atu ana i te ātete 1×10¹² Ω·cm me ngā mātotoru paipa iti iho i te 0.1 cm⁻², e whakarite ana i te iti o te turuturu mō ngā taputapu RF me te ngaruiti. Ko te Cubic 3C-N, e wātea ana i roto i ngā whakatakotoranga 2″ me te 4″, ka taea te heteroepitaxy i runga i te silicon me te tautoko i ngā tono photonic me MEMS hou. Ko ngā papa momo-P 4H/6H-P, kua pania ki te konumohe ki te 1×10¹⁶–5×10¹⁸ cm⁻³, ka āwhina i ngā hoahoa taputapu tautoko.
Ka whakakanapahia ngā papa SiC, ngā papa PRIME ki te matū-ā-ringa kia iti iho i te 0.2 nm RMS te taratara o te mata, kia iti iho i te 3 µm te rerekētanga o te matotoru katoa, ā, kia iti iho i te 10 µm te piko. Ka tere ake ngā whakamātautau huihuinga me te tākai a ngā papa DUMMY, ko ngā papa RESEARCH ia he matotoru paparanga-epi o te 2–30 µm me te tāpiritanga ritenga. Kua whakamanahia ngā hua katoa e te X-ray diffraction (rocking curve <30 arcsec) me te Raman spectroscopy, me ngā whakamātautau hiko—ngā inenga Hall, te whakatauira C–V, me te matawai micropipe—kia whakarite ai i te tutuki a JEDEC me SEMI.
Ka whakatipuria ngā kōpura tae atu ki te 150 mm te whānui mā te PVT me te CVD me ngā kiato whakakorikori i raro i te 1×10³ cm⁻² me te iti o te maha o ngā paipa moroiti. Ka tapahia ngā tioata purapura i roto i te 0.1° o te tuaka-c hei whakarite i te tipu ka taea te whakaputa anō me te hua tapatapahi teitei.
Mā te whakakotahi i ngā momo momo maha, ngā momo tāpiringa, ngā tohu kounga, ngā rahi o te wafer SiC, me te hanga boule me te karaihe purapura i roto i te whare, ka whakangawarihia e tā mātou tūāpapa papa SiC ngā mekameka tuku me te whakateretere i te whanaketanga taputapu mō ngā waka hiko, ngā whatunga atamai, me ngā tono taiao uaua.
He whakarāpopototanga o te wafer SiC
Ngā papa angiangi silicon carbide (SiC)kua noho hei papa SiC whiriwhiri mō ngā hikohiko mana-teitei, auau-teitei, me te pāmahana-teitei puta noa i ngā rāngai motuka, pūngao whakahou, me te rererangi. Kei roto i tā mātou putea ngā momo matua me ngā kaupapa tāpiringa—4H (4H-N) kua tāpirihia ki te hauota, te haurua-whakamātao parakore-teitei (HPSI), te 3C (3C-N) kua tāpirihia ki te hauota, me te momo-p 4H/6H (4H/6H-P)—e tukuna ana i roto i ngā taumata kounga e toru: te papa SiCPRIME (ngā papa kua oti te whakakanapa, he rite ki te taputapu), DUMMY (kua pania, kāore rānei i whakakanapahia mō ngā whakamātautau tukanga), me te RANGAHAU (ngā paparanga epi ritenga me ngā kōtaha tāpiri mō te R&D). Ko ngā diameter o te SiC Wafer e 2″, 4″, 6″, 8″, me te 12″ kia rite ki ngā taputapu tawhito me ngā papanga matatau. Ka tukuna hoki e mātou ngā boule monocrystalline me ngā tioata purapura kua whakaritea tika hei tautoko i te tipu tioata o roto.
Kei roto i ā mātou papa 4H-N SiC ngā mātotoru kawe mai i te 1×10¹⁶ ki te 1×10¹⁹ cm⁻³ me ngā ātete o te 0.01–10 Ω·cm, e tuku ana i te nekehanga irahiko me ngā mara pakaru pai rawa atu i runga ake i te 2 MV/cm—he pai mō ngā diode Schottky, MOSFET, me JFET. Ko ngā papa HPSI e neke atu ana i te ātete 1×10¹² Ω·cm me ngā mātotoru paipa iti iho i te 0.1 cm⁻², e whakarite ana i te iti o te turuturu mō ngā taputapu RF me te ngaruiti. Ko te Cubic 3C-N, e wātea ana i roto i ngā whakatakotoranga 2″ me te 4″, ka taea te heteroepitaxy i runga i te silicon me te tautoko i ngā tono photonic me MEMS hou. Ko ngā papa SiC momo-P 4H/6H-P, kua pania ki te konumohe ki te 1×10¹⁶–5×10¹⁸ cm⁻³, ka āwhina i ngā hoahoa taputapu tautoko.
Ka whakakanapahia ngā papa SiC PRIME ki te matū-ā-ringa kia iti iho i te 0.2 nm RMS te taratara o te mata, kia iti iho i te 3 µm te rerekētanga o te matotoru katoa, ā, kia iti iho i te 10 µm te piko. Ka tere ake ngā whakamātautau huihuinga me te tākai a ngā papa DUMMY, ko ngā papa RESEARCH ia he matotoru paparanga-epi o te 2–30 µm me te tāpiritanga motuhake. Kua whakamanahia ngā hua katoa e te X-ray diffraction (rocking curve <30 arcsec) me te Raman spectroscopy, me ngā whakamātautau hiko—ngā inenga Hall, te whakatauira C–V, me te matawai micropipe—kia whakarite ai i te tutuki a JEDEC me SEMI.
Ka whakatipuria ngā kōpura tae atu ki te 150 mm te whānui mā te PVT me te CVD me ngā kiato whakakorikori i raro i te 1×10³ cm⁻² me te iti o te maha o ngā paipa moroiti. Ka tapahia ngā tioata purapura i roto i te 0.1° o te tuaka-c hei whakarite i te tipu ka taea te whakaputa anō me te hua tapatapahi teitei.
Mā te whakakotahi i ngā momo momo maha, ngā momo tāpiringa, ngā tohu kounga, ngā rahi o te wafer SiC, me te hanga boule me te karaihe purapura i roto i te whare, ka whakangawarihia e tā mātou tūāpapa papa SiC ngā mekameka tuku me te whakateretere i te whanaketanga taputapu mō ngā waka hiko, ngā whatunga atamai, me ngā tono taiao uaua.
Pikitia o te wafer SiC
Rau raraunga mō te anga wafer momo SiC 4H-N 6inihi
| Rau raraunga wafers SiC 6inihi | ||||
| Tawhā | Tawhā-iti | Tau Z | Taumata P | Tau D |
| Diameter | 149.5–150.0 mm | 149.5–150.0 mm | 149.5–150.0 mm | |
| Matotoru | 4H‑N | 350 µm ± 15 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Matotoru | 4H‑SI | 500 µm ± 15 µm | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Te Aronga o te Wafer | Kei waho o te tuaka: 4.0° ki te <11-20> ±0.5° (4H-N); Kei runga i te tuaka: <0001> ±0.5° (4H-SI) | Kei waho o te tuaka: 4.0° ki te <11-20> ±0.5° (4H-N); Kei runga i te tuaka: <0001> ±0.5° (4H-SI) | Kei waho o te tuaka: 4.0° ki te <11-20> ±0.5° (4H-N); Kei runga i te tuaka: <0001> ±0.5° (4H-SI) | |
| Te Kīanga o te Paipa Maikoro | 4H‑N | ≤ 0.2 henimita⁻² | ≤ 2 henimita⁻² | ≤ 15 henimita⁻² |
| Te Kīanga o te Paipa Maikoro | 4H‑SI | ≤ 1 henimita⁻² | ≤ 5 henimita⁻² | ≤ 15 henimita⁻² |
| Ātete | 4H‑N | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | 0.015–0.028 Ω·cm |
| Ātete | 4H‑SI | ≥ 1×10¹⁰ Ω·cm | ≥ 1×10⁵ Ω·cm | |
| Te whakatakotoranga papatahi tuatahi | [10-10] ± 5.0° | [10-10] ± 5.0° | [10-10] ± 5.0° | |
| Roa Papatahi Tuatahi | 4H‑N | 47.5 mm ± 2.0 mm | ||
| Roa Papatahi Tuatahi | 4H‑SI | Te kokoru | ||
| Te Whakakore i te Tapa | 3 mm | |||
| Wīra/LTV/TTV/Pīkoi | ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| Te taratara | Pōrana | Ra ≤ 1 nm | ||
| Te taratara | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Ngā Kapiti o te Tapa | Kāore | Te roa tāpiri ≤ 20 mm, te kotahi ≤ 2 mm | ||
| Pereti Hex | Te horahanga tāpiri ≤ 0.05% | Te horahanga tāpiri ≤ 0.1% | Te horahanga tāpiri ≤ 1% | |
| Ngā Rohe Momo-maha | Kāore | Te horahanga tāpiri ≤ 3% | Te horahanga tāpiri ≤ 3% | |
| Ngā Whakaurunga Waro | Te horahanga tāpiri ≤ 0.05% | Te horahanga tāpiri ≤ 3% | ||
| Ngā Karakura o te Mata | Kāore | Te roa tāpiri ≤ 1 × te whānui o te anga | ||
| Maramara Tapa | Kāore e whakaaetia he whānui me te hohonu ≥ 0.2 mm | Tae atu ki te 7 maramara, ≤ 1 mm ia maramara | ||
| TSD (Te Nekehanga o te Tīwiri Miro) | ≤ 500 henimita⁻² | Kāore he | ||
| BPD (Te Nekehanga o te Papa Tūāpapa) | ≤ 1000 henimita⁻² | Kāore he | ||
| Te Parahanga o te Mata | Kāore | |||
| Tākai | Rīpene anga maha, ipu anga kotahi rānei | Rīpene anga maha, ipu anga kotahi rānei | Rīpene anga maha, ipu anga kotahi rānei | |
Rau raraunga mō te anga wafer momo SiC 4 inihi 4H-N
| Pepa raraunga o te wafer SiC 4inihi | |||
| Tawhā | Kore MPD Production | Paerewa Whakaputa Paerewa (P Grade) | Taumata Rūpahu (Taumata D) |
| Diameter | 99.5 mm–100.0 mm | ||
| Matotoru (4H-N) | 350 µm±15 µm | 350 µm±25 µm | |
| Matotoru (4H-Si) | 500 µm±15 µm | 500 µm±25 µm | |
| Te Aronga o te Wafer | Ki waho o te tuaka: 4.0° ki te <1120> ±0.5° mō te 4H-N; Kei runga i te tuaka: <0001> ±0.5° mō te 4H-Si | ||
| Te Matotoru o te Paipa Maikoro (4H-N) | ≤0.2 henimita⁻² | ≤2 henimita⁻² | ≤15 henimita⁻² |
| Te Matotoru o te Paipa Maikoro (4H-Si) | ≤1 henimita⁻² | ≤5 henimita⁻² | ≤15 henimita⁻² |
| Ātete (4H-N) | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm | |
| Ātete (4H-Si) | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |
| Te whakatakotoranga papatahi tuatahi | [10-10] ±5.0° | ||
| Roa Papatahi Tuatahi | 32.5 mm ±2.0 mm | ||
| Roa Papatahi Tuarua | 18.0 mm ±2.0 mm | ||
| Te whakatakotoranga papatahi tuarua | Ko te mata o te silicon ki runga: 90° CW mai i te papatahi matua ±5.0° | ||
| Te Whakakore i te Tapa | 3 mm | ||
| LTV/TTV/Pīkau | ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Te taratara | Pōro Ra ≤1 nm; CMP Ra ≤0.2 nm | Ra ≤0.5 nm | |
| Ngā Kapiti o te Tapa i te Mārama Kaha Rawa | Kāore | Kāore | Te roa tāpiri ≤10 mm; te roa takitahi ≤2 mm |
| Pereti Hex mā te Mārama Kaha Teitei | Te horahanga tāpiri ≤0.05% | Te horahanga tāpiri ≤0.05% | Te horahanga tāpiri ≤0.1% |
| Ngā Rohe Momo-maha Mā te Mārama Kaha Teitei | Kāore | Te horahanga tāpiri ≤3% | |
| Ngā Whakaurunga Waro Tirohanga | Te horahanga tāpiri ≤0.05% | Te horahanga tāpiri ≤3% | |
| Ngā Karawarawa Mata Silicon e te Mārama Kaha Teitei | Kāore | Te roa tāpiri ≤1 te whānui o te anga | |
| Ngā Maramara Tapa Mā te Mārama Kaha Teitei | Kāore i whakaaetia te whānui me te hohonu ≥0.2 mm | 5 e whakaaetia ana, ≤1 mm ia | |
| Te Parahanga o te Mata Silicon e te Mārama Kaha Teitei | Kāore | ||
| Te nekehanga o te tīwiri miro | ≤500 henimita⁻² | Kāore he | |
| Tākai | Rīpene anga maha, ipu anga kotahi rānei | Rīpene anga maha, ipu anga kotahi rānei | Rīpene anga maha, ipu anga kotahi rānei |
Pepa raraunga mō te wafer momo HPSI SiC 4inihi
| Pepa raraunga mō te wafer momo HPSI SiC 4inihi | |||
| Tawhā | Kore Tohu Whakaputa MPD (Tohu Z) | Paerewa Whakaputa Paerewa (P Grade) | Taumata Rūpahu (Taumata D) |
| Diameter | 99.5–100.0 mm | ||
| Matotoru (4H-Si) | 500 µm ±20 µm | 500 µm ±25 µm | |
| Te Aronga o te Wafer | Ki waho o te tuaka: 4.0° ki te <11-20> ±0.5° mō te 4H-N; Kei runga i te tuaka: <0001> ±0.5° mō te 4H-Si | ||
| Te Matotoru o te Paipa Maikoro (4H-Si) | ≤1 henimita⁻² | ≤5 henimita⁻² | ≤15 henimita⁻² |
| Ātete (4H-Si) | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |
| Te whakatakotoranga papatahi tuatahi | (10-10) ±5.0° | ||
| Roa Papatahi Tuatahi | 32.5 mm ±2.0 mm | ||
| Roa Papatahi Tuarua | 18.0 mm ±2.0 mm | ||
| Te whakatakotoranga papatahi tuarua | Ko te mata o te silicon ki runga: 90° CW mai i te papatahi matua ±5.0° | ||
| Te Whakakore i te Tapa | 3 mm | ||
| LTV/TTV/Pīkau | ≤3 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Te taratara (mata C) | Pōrana | Ra ≤1 nm | |
| Te taratara (mata Si) | CMP | Ra ≤0.2 nm | Ra ≤0.5 nm |
| Ngā Kapiti o te Tapa i te Mārama Kaha Rawa | Kāore | Te roa tāpiri ≤10 mm; te roa takitahi ≤2 mm | |
| Pereti Hex mā te Mārama Kaha Teitei | Te horahanga tāpiri ≤0.05% | Te horahanga tāpiri ≤0.05% | Te horahanga tāpiri ≤0.1% |
| Ngā Rohe Momo-maha Mā te Mārama Kaha Teitei | Kāore | Te horahanga tāpiri ≤3% | |
| Ngā Whakaurunga Waro Tirohanga | Te horahanga tāpiri ≤0.05% | Te horahanga tāpiri ≤3% | |
| Ngā Karawarawa Mata Silicon e te Mārama Kaha Teitei | Kāore | Te roa tāpiri ≤1 te whānui o te anga | |
| Ngā Maramara Tapa Mā te Mārama Kaha Teitei | Kāore i whakaaetia te whānui me te hohonu ≥0.2 mm | 5 e whakaaetia ana, ≤1 mm ia | |
| Te Parahanga o te Mata Silicon e te Mārama Kaha Teitei | Kāore | Kāore | |
| Te Nekehanga o te Tīwiri Miro | ≤500 henimita⁻² | Kāore he | |
| Tākai | Rīpene anga maha, ipu anga kotahi rānei | ||
Te tono a te wafer SiC
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Ngā Kōwae Mana Wafer SiC mō ngā Kaitahuri EV
Ko ngā MOSFET me ngā diode e hangai ana ki te wafer SiC i hangaia i runga i ngā papa wafer SiC kounga teitei ka tukuna he mate whakawhiti tino iti. Mā te whakamahi i te hangarau wafer SiC, ka mahi ēnei kōwae hiko i ngā ngaohiko me ngā pāmahana teitei ake, ka taea ai te whakamahi i ngā kaitahuri hiko pai ake. Mā te whakauru i ngā mate wafer SiC ki ngā wāhanga hiko ka whakaitihia ngā whakaritenga whakamatao me te tapuwae, ka whakaatu i te pūmanawa katoa o te auahatanga wafer SiC. -
Ngā Pūrere RF Auau-Tiketike me te 5G i runga i te Wafer SiC
Ko ngā whakakaha RF me ngā pana i hangaia i runga i ngā papaaho wafer SiC haurua-whakamaroke he pai ake te kawe wera me te ngaohiko pakaru. Ka whakaitihia e te papa wafer SiC ngā mate dielectric i ngā auau GHz, ko te kaha o te rauemi wafer SiC ka taea te mahi pumau i raro i ngā āhuatanga mana-teitei, pāmahana-teitei—ka waiho te wafer SiC hei papa whiriwhiri mō ngā teihana turanga 5G o te reanga e whai ake nei me ngā pūnaha radar. -
Ngā Papa Optoelectronic me ngā Papa LED mai i te Wafer SiC
Ko ngā rama LED kikorangi me te rama UV i whakatipuria ki runga i ngā papa wafer SiC ka whai hua mai i te taurite whatunga pai me te tohatoha wera. Mā te whakamahi i te wafer SiC mata-C kua orohia ka whakarite kia ōrite ngā paparanga epitaxial, ā, mā te pakeke o te wafer SiC ka taea te angiangi i te wafer pai me te takai taputapu pono. Nā tēnei ka waiho te wafer SiC hei tūāpapa matua mō ngā tono rama LED kaha-teitei, roa te ora.
Ngā Pātai me ngā Whakautu a te Wafer SiC
1. P: Me pēhea te hanga i ngā papa SiC?
A:
Ngā papa SiC i hangaiaNgā Hipanga Taipitopito
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Ngā papa SiCTe Whakarite Rauemi Mata
- Whakamahia te paura SiC ≥5N-grade (ngā poke ≤1 ppm).
- Tātarihia, ka tunua i mua hei tango i ngā toenga o ngā matū waro, hauota rānei.
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SiCTe Whakarite i te Karaihe Pūmua
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Tangohia he wahi o te tioata kotahi 4H-SiC, tapatapahia i te ahunga 〈0001〉 ki te ~10 × 10 mm².
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Whakakanapahia kia tika ki te Ra ≤0.1 nm, ka tohua te whakatakotoranga tioata.
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SiCTe Tipu PVT (Te Kawenga Kohu Tinana)
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Utaina te ipu karapiti: ki raro me te paura SiC, ki runga me te karaihe purapura.
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Whakawetohia ki te 10⁻³–10⁻⁵ Torr, whakakīia rānei ki te hēriuma parakore-teitei i te 1 atm.
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Whakamahanahia te rohe pūtake ki te 2100–2300 ℃, kia mātao ake te rohe purapura ki te 100–150 ℃.
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Whakahaerehia te tere tipu i te 1–5 mm/h hei whakataurite i te kounga me te putanga.
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SiCTe Whakamahana Ingota
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Whakamahanahia te konganuku SiC kua tupu i te 1600–1800 ℃ mō ngā haora 4–8.
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Te Kaupapa: te whakaiti i ngā ahotea wera me te whakaiti i te mātotoru o te nekehanga.
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SiCTe Tapahi Wafer
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Whakamahia he kani waea taimana hei tapatapahi i te ingota kia rite ki ngā anga angiangi, 0.5–1 mm te matotoru.
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Whakaitihia te wiri me te kaha taha kia kore ai e pakaru moroiti.
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SiCWaferTe Huri me te Whakakanapa
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Te huri matotoruhei tango i te kino o te kani (te taratara ~10–30 µm).
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Huri paihei whakatutuki i te papatahi ≤5 µm.
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Te Whakakanapa Matū-Mīhini (CMP)kia eke ki te mutunga whakaata (Ra ≤0.2 nm).
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SiCWaferTe Horoi me te Tirotiro
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Horoi ultrasonici roto i te wairewa Piranha (H₂SO₄:H₂O₂), te wai DI, ka IPA.
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Matawai XRD/Ramanhei whakaū i te momo-maha (4H, 6H, 3C).
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Interferometryhei ine i te papatahi (<5 µm) me te piko (<20 µm).
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Pūnaha tirotiro whā-irahei whakamātautau i te ātete (hei tauira, HPSI ≥10⁹ Ω·cm).
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Tirotiro hapai raro i te karu hiko mārama kua whakaporotitia me te whakamātautau rakuraku.
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SiCWaferTe Whakarōpūtanga me te Tātaritanga
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Whakarōpūhia ngā angaanga mā te momo maha me te momo hiko:
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4H-SiC momo-N (4H-N): kukū kawe 10¹⁶–10¹⁸ cm⁻³
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4H-SiC Āhua-Whakamātao Teitei (4H-HPSI): ātete ≥10⁹ Ω·cm
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Momo-N 6H-SiC (6H-N)
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Ētahi atu: 3C-SiC, momo-P, me ētahi atu.
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SiCWaferTe Tākai me te Tukunga
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Whakatakotoria ki roto i ngā pouaka wafer ma, kore puehu.
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Tāpirihia he tapanga ki ia pouaka me te whānui, te matotoru, te momo rauemi, te taumata ātete, me te tau puranga.
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2. P: He aha ngā painga matua o ngā papa SiC i ngā papa silicon?
A: Ki te whakatauritea ki ngā papa silicon, ka taea e ngā papa SiC te:
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Te mahi ngaohiko teitei ake(>1,200 V) me te ātete-whakahohe iti ake.
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Te pumau o te pāmahana teitei ake(>300 °C) me te whakahaere pāmahana kua whakapaitia.
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Ngā tere whakawhiti tere akeme te iti ake o ngā mate whakawhiti, ka whakaiti i te whakamatao taumata-pūnaha me te rahi o ngā kaitahuri hiko.
4. P: He aha ngā hapa noa e pā ana ki te hua me te mahi o te wafer SiC?
A: Ko ngā hapa matua o ngā anga SiC ko ngā paipa iti, ngā nekehanga papa turanga (BPD), me ngā karawarawa mata. Ka taea e ngā paipa iti te whakararu i te taputapu; ka piki ake te ātete-ā-ringa o ngā BPD i te roanga o te wā; ā, ka hua ake te pakaru o te anga, te tipu ngoikore rānei o te epitaxial nā ngā karawarawa mata. Nō reira, he mea nui te tirotiro pakari me te whakaiti i te hapa kia nui ake ai te hua o te anga SiC.
Wā tuku: Pipiri-30-2025