Kua whanake haere ngā rauemi hiko-haurua i roto i ngā whakatipuranga e toru:
Nā te Reanga Tuatahi (Si/Ge) i whakatakoto te turanga o ngā hikohiko hou,
I pakaruhia e te 2nd Gen (GaAs/InP) ngā arai optoelectronic me te auau-teitei hei whakakaha i te hurihanga mōhiohio,
Kei te aro atu te Reanga Tuatoru (SiC/GaN) ki ngā wero o te pūngao me te taiao tino kino, e āhei ai te noho kore waro me te ao 6G.
E whakaatu ana tēnei ahunga whakamua i tētahi nekehanga mai i te whānuitanga o te mātauranga ki te tohungatanga ki te pūtaiao rauemi.
1. Ngā Kaiārahi Āhua-Tuatahi o te Whakatipuranga: Silicon (Si) me te Germanium (Ge)
Papamuri Hītori
I te tau 1947, i hangaia e Bell Labs te transistor germanium, hei tohu i te tīmatanga o te wā semiconductor. I te tekau tau atu i 1950, i whakakapia haeretia e te silicon te germanium hei turanga mō ngā ara iahiko whakauru (IC) nā te mea he paparanga waikura pumau (SiO₂) me te nui o ngā rahui taiao.
Ngā Āhuatanga Rauemi
ⅠĀputa roopu:
Tiamanauma: 0.67eV (āputa whāiti, ngāwari ki te ia turuturu, ngoikore te mahi pāmahana teitei).
Hiraka: 1.12eV (āputa whakawhiti ā-kore, he pai mō ngā ara iahiko arorau engari kāore e taea te tuku mārama).
TuaruaNgā Painga o te Hiraka:
Ka hangaia he waikura kounga teitei (SiO₂) mā te taiao, ka taea ai te hanga MOSFET.
He iti te utu, ā, he nui te oneone (~28% o te hanganga o te papa whenua).
Ⅲ,Ngā Here:
He iti te nekenekehanga o ngā irahiko (1500 cm²/(V·s) anake), e whakawhāiti ana i te mahi auau-tiketike.
Te ātete ngoikore ki te ngaohiko/pāmahana (te pāmahana whakahaere mōrahi ~150°C).
Ngā Taupānga Matua
Ⅰ、Ngā Huringa Whakauru (IC):
Ka whakawhirinaki ngā CPU me ngā maramara mahara (hei tauira, DRAM, NAND) ki te silicon mō te kiato whakauru teitei.
Tauira: I whakamahia e te Intel 4004 (1971), te pūtukatuka arumoni tuatahi, te hangarau silicon 10μm.
TuaruaNgā Pūrere Hiko:
I ahu mai i te silicon ngā thyristor me ngā MOSFET ngaohiko-iti o mua (hei tauira, ngā pūhiko PC).
Ngā Wero me te Tawhitotanga
I whakakorea te Germanium nā te turuturu me te kore pumau o te pāmahana. Heoi, nā ngā herenga o te silicon i roto i ngā optoelectronics me ngā tono mana-teitei i akiaki te whanaketanga o ngā semiconductors o muri mai.
2 Ngā Kaiārahi-Haumaru o te Whakatipuranga Tuarua: Gallium Arsenide (GaAs) me te Indium Phosphide (InP)
Papamuri Whakawhanaketanga
I ngā tau 1970 ki te 1980, nā ngā mara hou pēnei i te whakawhitiwhiti kōrero pūkoro, ngā whatunga muka whatu, me te hangarau amiorangi i hanga he tono nui mō ngā rauemi optoelectronic auau-teitei me te whai hua. Nā tēnei i ārahi te whanaketanga o ngā semiconductors band-apart tika pēnei i te GaAs me te InP.
Ngā Āhuatanga Rauemi
Te Āputa Pūmau me te Mahi Optoelectronic:
GaAs: 1.42eV (te āputa whakawhiti tika, ka taea te tuku mārama—he pai mō ngā taiaho/LED).
InP: 1.34eV (he pai ake mō ngā tono roa-ngaru, hei tauira, ngā whakawhitiwhitinga muka-whatu 1550nm).
Te Nekehanga Irahiko:
Ka tutuki i ngā GaAs te 8500 cm²/(V·s), he nui atu i te silicon (1500 cm²/(V·s)), ā, he mea tino pai mō te tukatuka tohu awhe-GHz.
Ngā ngoikoretanga
lNgā papa pakarukaru: He uaua ake te hanga i te silicon; 10x te utu nui ake mō ngā papa GaAs.
lKāore he waikura taketake: Kāore i rite ki te SiO₂ o te silicon, kāore i te GaAs/InP ngā waikura pumau, ā, ka ārai i te hanganga IC kiato-teitei.
Ngā Taupānga Matua
lNgā Muka-Mua RF:
Ngā whakakaha hiko pūkoro (PA), ngā whakawhiti oro amiorangi (hei tauira, ngā transistors HEMT e hangai ana ki te GaAs).
lNgā taputapu hikohiko:
Ngā taiaho taiaho (ngā puku CD/DVD), ngā rama LED (whero/whero-whero), ngā kōwae muka-whatu (ngā taiaho InP).
lNgā Pūtau Rā o te Wāhi:
E 30% te pai o te mahi a ngā pūtau GaAs (ki te whakataurite ki te ~20% mō te silicon), he mea nui tēnei mō ngā amiorangi.
lNgā Ārai Hangarau
Nā te utu nui, ka herea ngā GaAs/InP ki ngā tono motuhake me ngā tono teitei, ā, ka ārai i a rātou ki te whakakore i te mana o te silicon i roto i ngā maramara arorau.
Ngā Kaiārahi-Haumaru o te Whakatipuranga Tuatoru (Ngā Kaiārahi-Haumaru Whānui): Silicon Carbide (SiC) me te Gallium Nitride (GaN)
Ngā Atekōkiri Hangarau
Te Huringa Pūngao: Ko ngā waka hiko me te whakaurunga o te whatunga pūngao hou e hiahia ana ki ngā taputapu hiko whai hua ake.
Ngā Hiahia Auau-Teitei: Ko ngā whakawhitiwhiti kōrero 5G me ngā pūnaha radar e hiahia ana ki ngā auau me te kiato mana teitei ake.
Ngā Taiao Tino Kaha: Me whai rauemi e kaha ana ki te tu atu i ngā pāmahana neke atu i te 200°C mō ngā tono motuka rererangi me ngā motuka ahumahi.
Ngā Āhuatanga Rauemi
Ngā Painga o te Āputa Whānui:
lSiC: Te āputa o te 3.26eV, te kaha o te papa hiko pakaru 10× i te kaha o te silicon, ka taea te tu atu i ngā ngaohiko neke atu i te 10kV.
lGaN: Te āputa o te 3.4eV, te nekenekehanga irahiko o te 2200 cm²/(V·s), he tino pai te mahi auau-tiketike.
Whakahaere Wera:
Ka eke te kawe wera o te SiC ki te 4.9 W/(cm·K), e toru ngā wā pai ake i te silicon, ā, he mea tino pai mō ngā tono mana-teitei.
Ngā Wero Rauemi
SiC: Ko te tipu puhoi o te tioata kotahi me neke ake i te 2000°C, ka hua ake he hapa o te papa wafer me te utu nui (he 20x te utu nui ake o te papa wafer SiC 6-inihi i te silicon).
GaN: Kāore he papa tūturu, e hiahiatia ana he heteroepitaxy i runga i ngā papa hapaira, SiC, silicon rānei, ka hua ake ngā raruraru taupatupatu whatunga.
Ngā Taupānga Matua
Te Hikohiko Mana:
Ngā kaitahuri hiko hiko (hei tauira, ka whakamahia e Tesla Model 3 ngā SiC MOSFET, ka whakapai ake i te whai huatanga mā te 5–10%).
Ngā teihana/ngā urutau utu tere (ka taea e ngā taputapu GaN te utu tere 100W+ me te whakaiti i te rahi mā te 50%).
Ngā Pūrere RF:
Ngā whakakaha hiko teihana turanga 5G (e tautoko ana ngā PA GaN-on-SiC i ngā auau mmWave).
Te radar hōia (e 5× te kaha o te GaN ki te kaha o ngā GaA).
Ngā taputapu hikohiko:
Ngā rama UV LED (ngā rauemi AlGaN e whakamahia ana mō te whakahoromata me te kimi i te kounga wai).
Te Tūnga o te Ahumahi me te Tirohanga ā-Mārama
Ko te SiC te rangatira o te mākete hiko-tiketike, ā, kua hangaia papatipu kētia ngā kōwae kounga-aunoa, ahakoa he arai tonu ngā utu.
Kei te tere haere te whānui o te GaN i roto i ngā taputapu hiko kaihoko (te utu tere) me ngā tono RF, e neke ana ki ngā anga 8-inihi.
Tērā pea ka hangaia e ngā rauemi hou pēnei i te gallium oxide (Ga₂O₃, bandgap 4.8eV) me te taimana (5.5eV) tētahi "whakatipuranga tuawhā" o ngā semiconductors, ka pana i ngā rohe ngaohiko ki tua atu i te 20kV.
Te Noho Tahi me te Mahi Tahi o ngā Whakatipuranga Ārahi-Haumaru
Te Whakakīkī, Ehara i te Whakakapinga:
Kei te kaha tonu te whakamahi i te silicon i roto i ngā maramara arorau me ngā hikohiko kaihoko (95% o te mākete haurua-ā-ao).
He tohunga a GaAs me InP ki ngā niches auau-tiketike me ngā niches optoelectronic.
Kāore e taea te whakakapi i te SiC/GaN i roto i te pūngao me ngā tono ahumahi.
Ngā Tauira Whakauru Hangarau:
GaN-on-Si: Ka whakakotahi i te GaN me ngā papa silicon iti te utu mō te utu tere me ngā tono RF.
Ngā kōwae ranu SiC-IGBT: Whakapai ake i te whai huatanga o te tahuritanga whatunga.
Ngā Auahatanga o te Ao:
Whakaurunga rerekē: Te whakakotahi i ngā rauemi (hei tauira, Si + GaN) ki runga i tētahi maramara kotahi hei whakataurite i te mahi me te utu.
Mā ngā rauemi āputa whānui rawa (hei tauira, Ga₂O₃, taimana) ka taea te whakamahi i ngā tono rorohiko ngaohiko tino teitei (>20kV) me te rorohiko matūriki.
Te whakaputanga e pā ana
Papa epitaxial taiaho GaAs 4 inihi 6 inihi
12 inihi te whānui o te papa SIC silicon carbide prime grade 300mm te rahi nui 4H-N. He pai mō te whakamarara wera o te taputapu mana nui.
Wā tuku: Mei-07-2025