Kua puta ake ngā uku silicon carbide (SiC) tino parakore hei rauemi pai mō ngā wāhanga nui i roto i ngā ahumahi semiconductor, aerospace, me te matū nā te mea he tino pai te kawe wera, te pumau matū, me te kaha miihini. I te pikinga ake o ngā tono mō ngā taputapu uku mahi-teitei, iti-parahanga, kua noho te whanaketanga o ngā hangarau whakarite whai hua me te tauine mō ngā uku SiC tino parakore hei arotahi rangahau ā-ao. Ka arotakehia e tēnei pepa ngā tikanga whakarite matua o nāianei mō ngā uku SiC tino parakore, tae atu ki te sintering recrystallization, te sintering kore-pēhanga (PS), te pēhi wera (HP), te sintering plasma mura (SPS), me te hanga tāpiri (AM), me te aro nui ki te matapaki i ngā tikanga sintering, ngā tawhā matua, ngā āhuatanga rauemi, me ngā wero o nāianei o ia tukanga.
Te whakamahinga o ngā uku SiC i roto i ngā mara o te ope taua me te miihini
I tēnei wā, e whakamahia whānuitia ana ngā wāhanga uku SiC tino parakore i roto i ngā taputapu hanga papa silicon, e whai wāhi ana ki ngā tukanga matua pēnei i te waikura, te tuhi, te whakairo, me te whakaurunga katote. Nā te whanaketanga o te hangarau papa, kua noho te whakanui ake i ngā rahi papa hei ia o te wā. Ko te rahi papa matua o nāianei ko te 300 mm, e tutuki ai te taurite pai i waenga i te utu me te kaha whakaputa. Heoi, nā te Ture a Moore i akiaki, kua noho kē te whakaputa papatipu o ngā papa 450 mm ki te kaupapa matua. Ko ngā papa nui ake me nui ake te kaha hanganga hei ātete i te piko me te whakarerekētanga, ka akiaki ake i te tipu haere o te hiahia mō ngā wāhanga uku SiC nui, kaha teitei, tino parakore. I ngā tau tata nei, kua whakaatuhia e te hanga tāpiri (tā 3D), hei hangarau tauira tere e kore e hiahiatia he pokepokea ai, te kaha nui ki te hanga i ngā wāhanga uku SiC matatini-hanganga nā tōna hanganga papa-i-te-papa me ngā āheinga hoahoa ngāwari, e kukume ana i te aro whānui.
Ka tātarihia e tēnei pepa ngā tikanga whakarite e rima mō ngā uku SiC tino parakore—te sintering recrystallization, te sintering kore pēhanga, te pēhi wera, te sintering plasma mura, me te hanga tāpiri—me te arotahi ki ā rātou tikanga sintering, ngā rautaki arotau tukanga, ngā āhuatanga mahi rauemi, me ngā tūmanakohanga tono ahumahi.
Ngā whakaritenga rauemi mata mō te silicon carbide parakore-teitei
I. Te Whakatōtō Anō i te Kiriata
Ko te karawiti silicon kua whakakōkītia anō (RSiC) he rauemi SiC tino parakore i hangaia me te kore he āwhina sintering i ngā pāmahana teitei o te 2100–2500°C. Mai i te kitenga tuatahi a Fredriksson i te āhuatanga o te recrystallization i te mutunga o te rautau 19, kua aro nui te RSiC nā te mea he ma ngā rohe kakano me te kore o ngā āhua karāhe me ngā poke. I ngā pāmahana teitei, he teitei te pēhanga kohu o te SiC, ā, ko tana tikanga sintering ko te tukanga mimiti-whakatōtō: ka mimiti ngā kakano pai ka rewa anō ki runga i ngā mata o ngā kakano nui ake, ka whakatairanga i te tipu o te kaki me te hononga tika i waenga i ngā kakano, ā, ka whakarei ake i te kaha o te rauemi.
I te tau 1990, i whakaritea e Kriegesmann te RSiC me te mātotoru whanaunga o te 79.1% mā te whakamahi i te whakarewanga paheke i te 2200°C, me te wāhanga whakawhiti e whakaatu ana i te hanganga moroiti i titoa mai i ngā kakano matotoru me ngā pūwero. I muri mai, i whakamahia e Yi me ētahi atu te whakarewanga ira hei whakarite i ngā tinana matomato, ā, i whakakāhia ki te 2450°C, ka puta he uku RSiC me te mātotoru papatipu o te 2.53 g/cm³ me te kaha piko o te 55.4 MPa.
Te mata pakaru SEM o RSiC
Ki te whakatauritea ki te SiC matotoru, he iti ake te matotoru o te RSiC (tata ki te 2.5 g/cm³) me te tata ki te 20% te porosity tuwhera, e whakawhāiti ana i tana mahi i roto i ngā tono kaha-teitei. Nō reira, ko te whakapai ake i te matotoru me ngā āhuatanga miihini o te RSiC kua noho hei arotahi rangahau matua. I whakaarohia e Sung me ētahi atu te whakauru i te silicon rewa ki roto i ngā konganuku whakaranu waro/β-SiC me te whakahou i te 2200°C, ā, i angitu te hanga i tētahi hanganga whatunga i titoa mai i ngā konganuku matotoru α-SiC. Ko te hua o te RSiC i tutuki he matotoru o te 2.7 g/cm³ me te kaha piko o te 134 MPa, e pupuri ana i te pumau miihini pai rawa atu i ngā pāmahana teitei.
Hei whakanui ake i te mātotoru, i whakamahia e Guo me ētahi atu te hangarau whakauru me te whakakorikori i te polymer (PIP) mō ngā maimoatanga maha o te RSiC. Mā te whakamahi i ngā otinga PCS/xylene me ngā paru SiC/PCS/xylene hei whakauru, i muri i ngā huringa PIP 3–6, i tino pai ake te mātotoru o te RSiC (tae atu ki te 2.90 g/cm³), me tōna kaha piko. I tua atu, i whakaarohia e rātou he rautaki huringa e whakakotahi ana i te PIP me te whakakorikori anō: te whakakorikori i te 1400°C, ā, i muri mai ko te whakakorikori anō i te 2400°C, e whakakore pai ana i ngā aukati matūriki me te whakaiti i te porosity. I tutuki i te rauemi RSiC whakamutunga te mātotoru o te 2.99 g/cm³ me te kaha piko o te 162.3 MPa, e whakaatu ana i te mahi whānui tino pai.
Ngā whakaahua SEM o te whanaketanga hanganga moroiti o te RSiC kua orohia i muri i ngā huringa whakakī me te whakapūkara (PIP)-whakahoutanga polymer: RSiC tuatahi (A), i muri i te huringa whakapūkara PIP tuatahi (B), me muri i te huringa tuatoru (C)
II. Te Whakatōtō Kore Pēhanga
Ko ngā uku silicon carbide (SiC) kua whakatōngia ki te kore-pēhanga ka hangaia mā te whakamahi i te paura SiC tino pai, tino parakore hei rauemi mata, me te tāpiri i ngā āwhina whakatōngia iti, ā, ka whakatōngia ki roto i te hau kore mahi, i te korehau rānei i te 1800–2150°C. He pai tēnei tikanga mō te whakaputa i ngā wāhanga uku nunui me te matatini te hanganga. Heoi, nā te mea he hononga honohono te SiC, he tino iti tōna tauwehenga horapa-ake, ka uaua ai te whakakīkī me te kore he āwhina whakatōngia.
I runga i te tikanga sintering, ka taea te wehewehe i te sintering kore pēhanga ki ngā wāhanga e rua: te sintering wai-wāhanga kore pēhanga (PLS-SiC) me te sintering totoka-āhua kore pēhanga (PSS-SiC).
1.1 PLS-SiC (Whakapūtanga Wai-Wāhanga)
Ko te tikanga, ka whakatōngia te PLS-SiC i raro iho i te 2000°C mā te tāpiri i te 10 wt.% o ngā āwhina whakatōngia eutectic (pēnei i te Al₂O₃, CaO, MgO, TiO₂, me ngā waikura whenua-onge RE₂O₃) hei hanga i tētahi āhua wai, hei whakatairanga i te whakaritenga matūriki me te whakawhiti papatipu hei whakatutuki i te whakakīkī. He pai tēnei tukanga mō ngā uku SiC taumata ahumahi, engari kāore anō kia puta he pūrongo mō te SiC parakore teitei i tutuki mā te whakatōngia āhua wai.
1.2 PSS-SiC (Te Whakapūtanga Āhua-Toka)
Ko te PSS-SiC he whakakīkī āhua totoka i ngā pāmahana neke atu i te 2000°C me te tata ki te 1 wt.% o ngā tāpiringa. Ko te nuinga o tēnei tukanga e whakawhirinaki ana ki te horapa ngota me te whakaritenga o te witi e peia ana e ngā pāmahana teitei hei whakaiti i te kaha o te mata me te whakatutuki i te whakakīkī. Ko te pūnaha BC (boron-waro) he huinga tāpiringa noa, ka taea te whakaiti i te kaha rohe witi me te tango i te SiO₂ mai i te mata SiC. Heoi, he maha ngā wā ka whakauruhia e ngā tāpiringa BC tuku iho ngā paru toenga, ka whakaiti i te parakore o te SiC.
Mā te whakahaere i te ihirangi tāpiri (B 0.4 wt.%, C 1.8 wt.%) me te whakamahana i te 2150°C mō te 0.5 hāora, i whiwhihia ngā uku SiC tino parakore me te parakore o te 99.6 wt.% me te mātotoru whanaunga o te 98.4%. I whakaatuhia e te hanganga moroiti he kōpura poutū (ko ētahi neke atu i te 450 µm te roa), me ngā pūwero iti i ngā rohe kōpura me ngā matūriki karāpeti i roto i ngā kōpura. I whakaatuhia e ngā uku he kaha piko o te 443 ± 27 MPa, he modulus elastic o te 420 ± 1 GPa, me te tauwehenga whānui wera o te 3.84 × 10⁻⁶ K⁻¹ i roto i te awhe o te pāmahana rūma ki te 600°C, e whakaatu ana i te mahi tino pai katoa.
Hanganga iti o te PSS-SiC: (A) Whakaahua SEM i muri i te whakakanapa me te whakairo NaOH; (BD) Whakaahua BSD i muri i te whakakanapa me te whakairo
III. Te Whakatōtō Wera
Ko te whakakīkī wera (HP) he tikanga whakakīkī e whakamahi ana i te wera me te pēhanga uniaxial ki ngā rauemi paura i raro i ngā āhuatanga pāmahana teitei me te pēhanga teitei. Ka ārai nui te pēhanga teitei i te hanganga o ngā pore me te whakawhāiti i te tipu o te witi, ko te pāmahana teitei ia ka whakatairanga i te hanumi witi me te hanganga o ngā hanganga matotoru, ka puta he uku SiC tino matotoru, tino parakore. Nā te āhua aronga o te pēhanga, ka puta te anisotropy witi i tēnei tukanga, ka pā ki ngā āhuatanga miihini me te kakahu.
He uaua te whakakīkī i ngā uku SiC parakore me te kore he tāpiringa, ā, me whakamahi i te sintering pēhanga tino teitei. I angitu a Nadeau me ētahi atu ki te whakarite i te SiC tino matotoru me te kore he tāpiringa i te 2500°C me te 5000 MPa; i whiwhi a Sun me ētahi atu i ngā rauemi papatipu β-SiC me te pakeke Vickers tae atu ki te 41.5 GPa i te 25 GPa me te 1400°C. Mā te whakamahi i te pēhanga 4 GPa, i whakaritea ngā uku SiC me te kiato whanaunga tata ki te 98% me te 99%, te pakeke o te 35 GPa, me te modulus elastic o te 450 GPa i te 1500°C me te 1900°C. Nā te paura SiC rahi-micron sintering i te 5 GPa me te 1500°C i hua mai ai he uku me te pakeke o te 31.3 GPa me te kiato whanaunga o te 98.4%.
Ahakoa e whakaatu ana ēnei hua ka taea e te pēhanga tino teitei te whakatutuki i te whakakīkī kore-tāpiri, ko te uaua me te utu nui o ngā taputapu e hiahiatia ana ka whakawhāiti i ngā tono ahumahi. Nō reira, i roto i te whakaritenga mahi, ka whakamahia pinepinetia ngā tāpiringa iti, te whakapūkara paura rānei hei whakarei ake i te kaha pana sintering.
Mā te tāpiri i te 4 wt.% phenolic resin hei tāpiri me te sintering i te 2350°C me te 50 MPa, i whiwhihia he uku SiC me te tere whakakī o te 92% me te parakore o te 99.998%. Mā te whakamahi i ngā rahinga tāpiri iti (waikawa boric me te D-fructose) me te sintering i te 2050°C me te 40 MPa, i whakaritea te SiC parakore teitei me te kiato whanaunga >99.5% me te ihirangi B toenga o te 556 ppm anake. I whakaatuhia e ngā whakaahua SEM, ki te whakatauritea ki ngā tauira sintering kore-pēhanga, he iti ake ngā kōpura o ngā tauira pehi-wera, he iti ake ngā pore, ā, he nui ake te kiato. Ko te kaha piko he 453.7 ± 44.9 MPa, ā, ko te modulus elastic i eke ki te 444.3 ± 1.1 GPa.
Mā te whakaroa i te wā pupuri i te 1900°C, i piki ake te rahi o te witi mai i te 1.5 μm ki te 1.8 μm, ā, i pai ake te kawe wera mai i te 155 ki te 167 W·m⁻¹·K⁻¹, me te whakarei ake anō hoki i te ātete ki te waikura o te plasma.
I raro i ngā āhuatanga o te 1850°C me te 30 MPa, nā te pēhi wera me te pēhi tere i te paura SiC kua whakapūkarahia, kua whakamahanahia, i hua mai he uku β-SiC tino matotoru, kāore he tāpiringa, me te matotoru o te 3.2 g/cm³ me te pāmahana whakapūkara 150–200°C te iti iho i ngā tukanga tuku iho. Ko te pakeke o ngā uku he 2729 GPa, ko te pakari o te pakaru he 5.25–5.30 MPa·m^1/2, ā, he tino ātete ki te ngokingoki (ngā tere ngokingoki o te 9.9 × 10⁻¹⁰ s⁻¹ me te 3.8 × 10⁻⁹ s⁻¹ i te 1400°C/1450°C me te 100 MPa).
(A) Whakaahua SEM o te mata kua orohia; (B) Whakaahua SEM o te mata pakaru; (C, D) Whakaahua BSD o te mata kua orohia
I roto i ngā rangahau tānga 3D mō ngā uku piezoelectric, ko te paru uku, hei mea matua e awe ana i te hanganga me te mahi, kua noho hei arotahi matua i roto i te motu me te ao. Ko ngā rangahau o nāianei e whakaatu ana ko ngā tawhā pēnei i te rahi o te matūriki paura, te matotoru o te paru, me te ihirangi totoka ka pā nui ki te kounga hanganga me ngā āhuatanga piezoelectric o te hua whakamutunga.
Kua kitea e ngā rangahau he rerekētanga nui ngā tukanga stereolithography (hei tauira, LCD-SLA) o ngā para uku i whakaritea mā te whakamahi i ngā paura barium titanate rahi-micron, iti-micron, me te nano. I te hekenga o te rahi o te matūriki, ka nui haere te matotoru o te para, ka puta he para me ngā matotoru e tae atu ana ki ngā piriona mPa·s. Ka ngāwari te wehewehe me te tihore i ngā para me ngā paura iti-micron i te wā tā, ko ngā paura iti-micron me te nano e whakaatu ana i te whanonga hanga pumau ake. I muri i te sintering pāmahana teitei, i tutuki i ngā tauira uku te mātotoru o te 5.44 g/cm³, he tauwehenga piezoelectric (d₃₃) tata ki te 200 pC/N, me ngā tauwehenga ngaronga iti, e whakaatu ana i ngā āhuatanga urupare hiko tino pai.
I tua atu, i roto i ngā tukanga moroiti-stereolithography, ko te whakatikatika i te ihirangi totoka o ngā parai momo-PZT (hei tauira, 75 wt.%) i hua ake ai he tinana kua whakatakahia me te kiato o te 7.35 g/cm³, ka tutuki ai he pūmau piezoelectric tae atu ki te 600 pC/N i raro i ngā mara hiko pou. Ko te rangahau mō te utu whakarerekētanga tauine-iti i tino whakapai ake i te tika o te hanga, me te whakarei ake i te tika o te āhuahanga tae atu ki te 80%.
I whakaatuhia e tētahi atu rangahau mō ngā uku piezoelectric PMN-PT he pānga nui te ihirangi totoka ki te hanganga uku me ngā āhuatanga hiko. I te 80 wt.% o te ihirangi totoka, ka puta ngāwari ngā hua taha i roto i ngā uku; i te pikinga ake o te ihirangi totoka ki te 82 wt.% me runga ake, ka ngaro haere ngā hua taha, ā, ka parakore ake te hanganga uku, me te whakapai ake i te mahi. I te 82 wt.%, i whakaatuhia e ngā uku ngā āhuatanga hiko tino pai: he pūmau piezoelectric o te 730 pC/N, he whakaaetanga whanaunga o te 7226, me te ngaronga dielectric o te 0.07 anake.
Hei whakarāpopototanga, ko te rahi o te matūriki, te ihirangi totoka, me ngā āhuatanga rheological o ngā para uku ehara i te mea ka pā ki te pumau me te tika o te tukanga tā anake, engari ka whakatau tika hoki i te kiato me te urupare piezoelectric o ngā tinana kua whakakāhia, ka waiho hei tawhā matua mō te whakatutuki i ngā uku piezoelectric tānga-3D teitei.
Ko te tukanga matua o te tānga LCD-SLA 3D o ngā tauira BT/UV
Ngā āhuatanga o ngā uku PMN-PT me ngā ihirangi totoka rerekē
IV. Te Whakatō Plasma Hiko
Ko te whakapūkara plasma mura (SPS) he hangarau whakapūkara matatau e whakamahi ana i te iahiko pāorooro me te pēhanga miihini e whakamahia ana i te wā kotahi ki ngā paura hei whakatutuki i te whakakī tere. I roto i tēnei tukanga, ka whakamahana tika te iahiko i te pokepokea ai me te paura, ka whakaputa i te wera Joule me te plasma, ka taea ai te whakapūkara pai i roto i te wā poto (i roto i te 10 meneti te nuinga). Ka whakatairangahia e te whakamahana tere te horapa o te mata, i te mea ka āwhina te tukunga mura ki te tango i ngā hau kua mimitihia me ngā paparanga waikura mai i ngā mata paura, ka whakapai ake i te mahi whakapūkara. Ka whakarei ake hoki te pānga hiko i puta mai i ngā mara hikohiko i te horapa ngota.
Ki te whakatauritea ki te pēhi wera tuku iho, ka whakamahia e te SPS te whakamahana tika ake, ka taea ai te whakakīkī i ngā pāmahana iti ake, me te aukati hoki i te tipu o te witi kia puta ai he hanganga moroiti pai, ōrite hoki. Hei tauira:
- I te whakamahinga o te paura SiC whenua hei rauemi mata, i te wā i whakawerahia ai i te 2100°C me te 70 MPa mō te 30 meneti, ka puta he tauira me te 98% te matotoru whanaunga.
- Mā te whakawera i te 1700°C me te 40 MPa mō te 10 meneti ka puta he SiC pūtoru me te kiato 98% me te rahi o te kōpura he 30–50 nm anake.
- Mā te whakamahi i te paura SiC kirikiri 80 µm me te whakawera i te 1860°C me te 50 MPa mō te 5 meneti, ka puta he uku SiC mahi-teitei me te 98.5% te kiato whanaunga, te pakeke moroiti Vickers o te 28.5 GPa, te kaha piko o te 395 MPa, me te pakari whati o te 4.5 MPa·m^1/2.
I whakaatuhia e te tātari hanganga moroiti, i te pikinga o te pāmahana sintering mai i te 1600°C ki te 1860°C, ka tino heke te porosity o te rauemi, ka tata ki te kiato katoa i ngā pāmahana tiketike.
Ko te hanganga moroiti o ngā uku SiC i whakakāhia ki ngā pāmahana rerekē: (A) 1600°C, (B) 1700°C, (C) 1790°C me te (D) 1860°C
V. Te Hanganga Tāpiri
Kua whakaatuhia e te hanga tāpiri (AM) te kaha nui ki te hanga i ngā wāhanga uku matatini nā te mea he paparanga-i-te-paparanga te tukanga hanga. Mō ngā uku SiC, he maha ngā hangarau AM kua whakawhanakehia, tae atu ki te pupuhi hononga (BJ), te 3DP, te sintering laser whiriwhiri (SLS), te tuhi waituhi tika (DIW), me te stereolithography (SL, DLP). Heoi, he iti ake te tika o te 3DP me te DIW, engari ka puta he ahotea wera me ngā kapiti i te SLS. He rerekē, he nui ake ngā painga o te BJ me te SL ki te whakaputa uku matatini tino parakore, tino tika.
- Te Whakarewatanga o te Here (BJ)
Ko te hangarau BJ he rehu paparanga-i-te-paparanga o te mea here ki te paura here, ā, muri iho ka tangohia te here me te whakamahana kia puta ai te hua uku whakamutunga. Nā te whakakotahitanga o te BJ me te whakaurunga kohu matū (CVI), i angitu te whakarite i ngā uku SiC tino parakore, tino tioata. Kei roto i te tukanga:
① Te hanga i ngā tinana matomato uku SiC mā te whakamahi i te BJ.
② Te whakakīkī mā te CVI i te 1000°C me te 200 Torr.
③ Ko te mātotoru o te uku SiC whakamutunga he 2.95 g/cm³, ko te kawe wera he 37 W/m·K, ā, ko te kaha piko he 297 MPa.
Te hoahoa kauwhata o te tānga jet piri (BJ). (A) Tauira hoahoa āwhina-rorohiko (CAD), (B) te hoahoa kauwhata o te mātāpono BJ, (C) te tānga o te SiC e te BJ, (D) te whakakīkī o te SiC mā te whakaurunga kohu matū (CVI)
- Te Whakairoirotanga Tawhito (SL)
He hangarau hanga uku SL e ahu mai ana i te whakamaroke UV, he tino tika, he uaua hoki ngā hanganga. Ka whakamahia e tēnei tikanga ngā paru uku whakaahua-ataata me te nui o te totoka me te iti o te matotoru hei hanga i ngā tinana matomato uku 3D mā te photopolymerization, ā, muri iho ka tangohia te here me te whakamahana pāmahana teitei hei whiwhi i te hua whakamutunga.
Mā te whakamahi i te para SiC 35 vol.%, i whakaritea ngā tinana matomato 3D kounga teitei i raro i te hihi UV 405 nm, ā, i whakakīkītia anō mā te tahu polymer i te 800°C me te maimoatanga PIP. I whakaatuhia e ngā hua ko ngā tauira i whakaritea ki te para 35 vol.% i tutuki i te kiato whanaunga o te 84.8%, he pai ake i ngā rōpū mana 30% me te 40%.
Mā te whakauru i te SiO₂ lipophilic me te phenolic epoxy resin (PEA) hei whakarerekē i te paru, i tino pai ake te mahi photopolymerization. Whai muri i te sintering i te 1600°C mō te 4 hāora, i tutuki te hurihanga tata ki te SiC, me te ihirangi hāora whakamutunga o te 0.12% anake, e taea ai te hanga i ngā uku SiC matatini, he tino parakore, me te kore he taahiraa i mua i te waikura, i mua rānei i te whakaurunga.
He whakaahua o te hanganga tā me tana tukanga whakawera. Te āhua o te tauira i muri i te whakamaroke i te (A) 25°C, te whakawera i te (B) 1000°C, me te whakawera i te (C) 1600°C.
Mā te hoahoa i ngā para uku Si₃N₄ e aro ana ki te whakaahua mō te tānga 3D stereolithography me te whakamahi i ngā tukanga tango-presintering me te pakeketanga pāmahana teitei, i whakaritea ngā uku Si₃N₄ me te 93.3% te kiato ariā, te kaha kume o te 279.8 MPa, me te kaha piko o te 308.5–333.2 MPa. I kitea e ngā rangahau i raro i ngā āhuatanga o te 45 vol.% te ihirangi totoka me te 10 hēkona te roa o te wā whakaaturanga, ka taea te whiwhi i ngā tinana matomato paparanga kotahi me te tika o te whakamaroke taumata IT77. Nā te tukanga tango-pāmahana iti me te tere whakamahana o te 0.1 °C/min i āwhina ki te whakaputa i ngā tinana matomato kore-pakaru.
Ko te whakapūtanga he taahiraa matua e pā ana ki te mahi whakamutunga i roto i te stereolithography. E whakaatu ana ngā rangahau ka taea e te tāpiri i ngā āwhina whakapūtanga te whakapai ake i te kiato uku me ngā āhuatanga miihini. Mā te whakamahi i te CeO₂ hei āwhina whakapūtanga me te hangarau whakapūtanga āwhina-mara hiko hei whakarite i ngā uku Si₃N₄ kiato teitei, i kitea ka wehea te CeO₂ i ngā rohe kōhatu, ka whakatairanga i te reti me te whakakīkī o te rohe kōhatu. Ko ngā uku i puta mai i whakaatu i te pakeke Vickers o HV10/10 (1347.9 ± 2.4) me te pakari whati o (6.57 ± 0.07) MPa·m¹/². Me te MgO–Y₂O₃ hei tāpiri, i whakapai ake te ōritetanga o te hanganga moroiti uku, ka tino whakarei ake i te mahi. I te taumata tāpiri katoa o te 8 wt.%, i eke te kaha piko me te kawe wera ki te 915.54 MPa me te 59.58 W·m⁻¹·K⁻¹, ia.
VI. Whakamutunga
Hei whakarāpopototanga, ko ngā uku silicon carbide (SiC) tino parakore, hei rauemi uku hangarau tino pai, kua whakaatu i ngā whai wāhitanga whānui mō te tono i roto i ngā semiconductors, te rererangi, me ngā taputapu tino āhua. I tātarihia e tēnei pepa ngā huarahi whakarite e rima mō ngā uku SiC tino parakore—te sintering recrystallization, te sintering kore pēhanga, te pēhi wera, te sintering plasma mura, me te hanga tāpiri—me ngā kōrero taipitopito mō ā rātou tikanga whakakīkī, te arotautanga tawhā matua, te mahi rauemi, me ngā painga me ngā herenga.
E kitea ana he rerekē ngā āhuatanga o ia tukanga, o ia tukanga, e pā ana ki te whakatutuki i te parakore teitei, te kiato teitei, ngā hanganga uaua, me te whaihua o te ahumahi. Kua whakaatuhia e te hangarau hanga tāpiripiri te kaha ki te hanga i ngā wāhanga āhua uaua me ngā wāhanga ritenga, me ngā putanga hou i roto i ngā mara iti pēnei i te stereolithography me te binding jetting, e waiho ana hei huarahi whanaketanga nui mō te whakarite uku SiC parakore teitei.
Me ruku hohonu ake ngā rangahau ā muri ake nei mō te whakarite uku SiC tino parakore, kia whakatairangahia ai te whakawhiti mai i te tauine taiwhanga ki ngā tono hangarau nui, tino pono, kia whakaratohia ai he tautoko rauemi nui mō te hanga taputapu teitei me ngā hangarau mōhiohio o te whakatupuranga e whai ake nei.
He umanga hangarau matatau a XKH e tohunga ana ki te rangahau me te whakaputa rauemi uku mahi-teitei. E whakatapua ana ki te whakarato otinga ritenga mō ngā kiritaki i roto i te ahua o ngā uku silicon carbide (SiC) tino parakore. Kei te kamupene ngā hangarau whakarite rauemi matatau me ngā āheinga tukatuka tika. Ko tana pakihi e kapi ana i te rangahau, te whakaputa, te tukatuka tika, me te maimoatanga mata o ngā uku SiC tino parakore, e tutuki ana i ngā whakaritenga pakari o te semiconductor, te pūngao hou, te rererangi me ētahi atu mara mō ngā wāhanga uku mahi-teitei. Mā te whakamahi i ngā tukanga sintering pakeke me ngā hangarau hanga tāpiri, ka taea e mātou te tuku ratonga kotahi ki ngā kiritaki mai i te arotautanga tauira rauemi, te hanganga hanganga uaua ki te tukatuka tika, me te whakarite kei a ngā hua ngā āhuatanga miihini pai rawa atu, te pumau wera me te ātete ki te waikura.
Wā tuku: Hurae-30-2025