Momo-N SiC i runga i ngā Papa Whakakotahi Si Dia6inihi

等级Tau

U 级

P级

D级

Te Tohu BPD Iti

Taumata Whakaputa

Tauira Tauira

直径Diameter

150.0 mm±0.25mm

厚度Matotoru

500 μm±25μm

晶片方向Te Aronga o te Wafer

Tuaka ke: 4.0°ki te < 11-20 > ±0.5°mō te 4H-N Kei runga i te tuaka: <0001>±0.5°mō te 4H-SI

主定位边方向Papa Matua

{10-10}±5.0°

主定位边长度Roa Papatahi Tuatahi

47.5 mm±2.5 mm

边缘Te aukati taha

3 mm

总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp

≤15μm /≤40μm /≤60μm

微管密度和基面位错MPD&BPD

MPD≤1 cm-2

MPD≤5 cm-2

MPD≤15 cm-2

BPD≤1000cm-2

电阻率Ātete

≥1E5 Ω·cm

表面粗糙度Te taratara

Pōrana Ra≤1 nm

CMP Ra≤0.5 nm

裂纹(强光灯观测) #

Kāore

Te roa tāpiri ≤10mm, te roa kotahi ≤2mm

Ngā pakaru i te mārama kaha

六方空洞（强光灯观测）*

Te horahanga tāpiri ≤1%

Te horahanga tāpiri ≤5%

Pereti Hex mā te mārama kaha teitei

多型(强光灯观测)*

Kāore

Te horahanga tāpiri ≤5%

Ngā Rohe Polytype mā te mārama kaha teitei

划痕(强光灯观测)*&

3 ngā karawarawa ki te 1×te whānui o te angaanga

5 ngā karawarawa ki te 1×te whānui o te angaanga

Ngā karawarawa i te mārama kaha

roanga whakaemi

roanga whakaemi

崩边# Maramara taha

Kāore

5 e whakaaetia ana, ≤1 mm ia

表面污染物（强光灯观测）

Kāore

Te poke i te mārama kaha