N-Momo SiC i runga i te Si Composite Substrates Dia6inihi

等级Kōeke

U 级

P级

D级

Koeke BPD iti

Koeke Whakaputa

Kōeke Dummy

直径Diamita

150.0 mm±0.25mm

厚度Te matotoru

500 μm±25μm

晶片方向Takotoranga Wafer

Tuaka Weto : 4.0° ki <11-20 > ±0.5°mo te 4H-N I runga tuaka : <0001>±0.5°mo te 4H-SI

主定位边方向Papa tuatahi

{10-10}±5.0°

主定位边长度Te Roa Papatahi Tuatahi

47.5 mm±2.5 mm

边缘Te whakakorenga taha

3 mm

总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp

≤15μm /≤40μm /≤60μm

微管密度和基面位错MPD&BPD

MPD≤1 cm-2

MPD≤5 cm-2

MPD≤15 cm-2

BPD≤1000cm-2

电阻率Te ātete

≥1E5 Ω·cm

表面粗糙度Te taratara

Poroni Ra≤1 nm

CMP Ra≤0.5 nm

裂纹(强光灯观测) #

Karekau

Roa whakaemi ≤10mm, kotahi roa≤2mm

Kapiti i te marama kaha teitei

六方空洞（强光灯观测）*

Horahanga whakahiato ≤1%

Horahanga whakahiato ≤5%

Hex Plates na te rama kaha teitei

多型(强光灯观测)*

Karekau

Horahanga whakahiato≤5%

Polytype Wāhanga mā te rama kaha teitei

划痕(强光灯观测)*&

3 rakuraku ki te 1×wafer diameter

5 rakuraku ki te 1×wafer diameter

Ka pakaruhia e te rama kaha teitei

roa whakaemi

roa whakaemi

崩边# Te maramara taha

Karekau

5 whakaaetia, ≤1 mm ia

表面污染物（强光灯观测）

Karekau

Te poke i te marama kaha teitei