N-Momo SiC i runga i te Si Composite Substrates Dia6inihi
| 等级Kōeke | U 级 | P级 | D级 |
| Koeke BPD iti | Koeke Whakaputa | Kōeke Dummy | |
| 直径Diamita | 150.0 mm±0.25mm | ||
| 厚度Te matotoru | 500 μm±25μm | ||
| 晶片方向Takotoranga Wafer | Tuaka Weto : 4.0° ki <11-20 > ±0.5°mo te 4H-N I runga tuaka : <0001>±0.5°mo te 4H-SI | ||
| 主定位边方向Papa tuatahi | {10-10}±5.0° | ||
| 主定位边长度Te Roa Papatahi Tuatahi | 47.5 mm±2.5 mm | ||
| 边缘Te whakakorenga taha | 3 mm | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤15μm /≤40μm /≤60μm | ||
| 微管密度和基面位错MPD&BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Te ātete | ≥1E5 Ω·cm | ||
| 表面粗糙度Te taratara | Poroni Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Karekau | Roa whakaemi ≤10mm, kotahi roa≤2mm | |
| Kapiti i te marama kaha teitei | |||
| 六方空洞（强光灯观测）* | Horahanga whakahiato ≤1% | Horahanga whakahiato ≤5% | |
| Hex Plates na te rama kaha teitei | |||
| 多型(强光灯观测)* | Karekau | Horahanga whakahiato≤5% | |
| Polytype Wāhanga mā te rama kaha teitei | |||
| 划痕(强光灯观测)*& | 3 rakuraku ki te 1×wafer diameter | 5 rakuraku ki te 1×wafer diameter | |
| Ka pakaruhia e te rama kaha teitei | roa whakaemi | roa whakaemi | |
| 崩边# Te maramara taha | Karekau | 5 whakaaetia, ≤1 mm ia | |
| 表面污染物（强光灯观测） | Karekau | ||
| Te poke i te marama kaha teitei | |||
Hoahoa Taipitopito
