Paparanga Epitaxial
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200mm 8inihi GaN i runga i te sapphire Epi-layer wafer substrate
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GaN i runga i te Karaehe 4-inihi: Kōwhiringa Karaehe Whakaritea Me JGS1, JGS2, BF33, me te Quartz Tika
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AlN-on-NPSS Wafer: Te Paparanga Aluminum Nitride Te Mahi Nui i runga i te Mahinga Sapphire Kore-Polihia mo te Maama-nui, Te Mana Nui, me nga Tono RF
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Gallium Nitride i runga i te angiangi Silicon 4inihi 6inihi Whakaritea Si Tapapa Takotoranga, Atete, me nga Kōwhiringa momo-N/momo-P
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Nga Wafers Epitaxial GaN-on-SiC kua Whakaritea (100mm, 150mm) - Nga Kōwhiringa Papanga SiC Maha (4H-N, HPSI, 4H/6H-P)
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GaN-on-Diamond Wafers 4inihi 6inihi Tapeke epi matotoru (micron) 0.6 ~ 2.5 he mea whakarite ranei mo nga tono Auautanga-Tiro
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InGaAs epitaxial wafer substrate PD Array photodetector huranga ka taea te whakamahi mo te LiDAR
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2inihi 3inihi 4inihi InP epitaxial wafer tïpako APD kaitirotiro marama mo nga korero muka whatu LiDAR ranei
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GaAs teitei-kaha epitaxial angiangi tïpako gallium arsenide angiangi mana taiaho roangaru 905nm mo te maimoatanga hauora taiaho
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Silicon-On-Insulator Substrate SOI angiangi e toru nga paparanga mo Microelectronics me te Reo Irirangi
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Insulator angiangi SOI i runga i nga angiangi angiangi 8-inihi me te 6-inihi SOI (Silicon-On-Insulator)
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6inihi SiC Epitaxiy angiangi momo N/P whakaae whakaritea