Ngā Papatūāpapa Karaihe SiC Whakarite Dia 205/203/208 Momo 4H-N mō ngā Whakawhitiwhiti Kōrero Whatu

Ngā Papatūāpapa Karaihe SiC Whakaritea Dia 205/203/208 Momo 4H-N mō ngā Whakawhitiwhiti Kōrero Whatu Whakaahua Matua

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Ko ngā papa tioata purapura SiC (silicon carbide), hei kaikawe matua o ngā rauemi semiconductor o te whakatupuranga tuatoru, ka whakamahi i ō rātou kawe wera teitei (4.9 W/cm·K), te kaha o te mara pakaru tino teitei (2–4 MV/cm), me te whānui o te āputa roopu (3.2 eV) hei rauemi turanga mō ngā optoelectronics, ngā waka pūngao hou, ngā whakawhitiwhitinga 5G, me ngā tono rererangi. Mā roto i ngā hangarau hanga matatau pērā i te kawe kohu tinana (PVT) me te epitaxy wāhanga wai (LPE), ka whakaratohia e XKH ngā papa purapura momo-4H/6H-N, haurua-whakamaroke, me te momo-3C-SiC i roto i ngā whakatakotoranga wafer 2–12-inihi, me ngā kiato paipa iti iho i te 0.3 cm⁻², te ātete mai i te 20–23 mΩ·cm, me te taratara o te mata (Ra) <0.2 nm. Kei roto i ā mātou ratonga te tipu heteroepitaxial (hei tauira, te SiC-on-Si), te miihini tika i roto i te nanoscale (±0.1 μm te manawanui), me te tuku tere puta noa i te ao, e whakamana ana i ngā kiritaki ki te wikitoria i ngā arai hangarau me te whakateretere i te kore waro me te panonitanga atamai.

Tukua mai he īmēra ki a mātou

Ngā Āhuatanga

Ngā tawhā hangarau

Te papa purapura silicon carbide
Momo maha	4H
Hapa whakatakotoranga mata	4°ki te<11-20>±0.5º
Ātete	whakaritenga
Diameter	205±0.5mm
Matotoru	600±50μm
Te taratara	CMP,Ra≤0.2nm
Te Kīanga o te Paipa Maikoro	≤1 ia/cm2
Ngā karawarawa	≤5, Roa Katoa ≤2 * Diameter
Ngā maramara/ngā nuku o te taha	Kāore
Te tohu laser o mua	Kāore
Ngā karawarawa	≤2, Roa Katoa ≤Diameter
Ngā maramara/ngā nuku o te taha	Kāore
Ngā rohe momo-maha	Kāore
Tohu laser whakamuri	1mm (mai i te taha o runga)
Tapa	Chamfer
Tākai	Rīpene maha-wafer

Ngā Āhuatanga Matua

1. Hanganga Tioata me te Mahi Hiko

· Te Pūmautanga o te Tioata: 100% te mana o te momo maha 4H-SiC, kāore he whakaurunga maha-tioata (hei tauira, 6H/15R), me te whānui-katoa o te pihi ruku XRD i te haurua-mōrahi (FWHM) ≤32.7 arcsec.

· Te Nekehanga Kawe Nui: Te nekenekehanga irahiko o te 5,400 cm²/V·s (4H-SiC) me te nekenekehanga kōhao o te 380 cm²/V·s, e āhei ai te hoahoa taputapu auau-tiketike.

·Pakeketanga Irahiko: Ka ātete ki te irahiko niutron 1 MeV me te paepae kino nekehanga o te 1×10¹⁵ n/cm², he mea tino pai mō ngā tono rererangi me te karihi.

2. Ngā Āhuatanga Wera me te Āhuatanga Ā-Mīhini

· Te Awe Wera Tino Pai: 4.9 W/cm·K (4H-SiC), e toru ngā wā i te silicon, e tautoko ana i te mahi i runga ake i te 200°C.

· Tauwehenga Whānui Wera Iti: CTE o te 4.0×10⁻⁶/K (25–1000°C), e whakarite ana i te hototahitanga ki ngā takai hanga-silicon me te whakaiti i te ahotea wera.

3. Te Whakahaere Hapa me te Tukatuka Tika

· Te Matotoru o te Paipa Makoro: <0.3 cm⁻² (ngā papa 8-inihi), te matotoru o te nekehanga <1,000 cm⁻² (i manatokohia mā te whakairo KOH).

· Kounga Mata: Kua orohia ki te CMP ki te Ra <0.2 nm, e tutuki ana i ngā whakaritenga papatahi o te EUV lithography.

Ngā Taupānga Matua

Rohe	Ngā horopaki tono	Ngā Painga Hangarau
Whakawhitiwhiti Kōrero Whatu	Ngā taiaho 100G/400G, ngā kōwae ranu photonics silicon	Mā ngā papa purapura InP ka taea te whakapūmau i te āputa hononga tika (1.34 eV) me te heteroepitaxy e hangai ana ki te Si, ka whakaitihia te ngaronga hononga whatu.
Ngā Waka Pūngao Hou	Ngā kaitahuri hiko-teitei 800V, ngā rihi kei roto i te whare (OBC)	Ka taea e ngā papa 4H-SiC te tu atu ki te >1,200 V, ka whakaiti i ngā ngaronga ara iahiko mā te 50% me te rōrahi pūnaha mā te 40%.
Ngā Whakawhitiwhiti Kōrero 5G	Ngā taputapu RF ngaru-mirimita (PA/LNA), ngā whakakaha hiko teihana turanga	Mā ngā papa SiC haurua-whakamaroke (ātete >10⁵ Ω·cm) ka taea te whakauru ā-auau-tiketike (60 GHz+).
Ngā Taputapu Ahumahi	Ngā pūoko pāmahana teitei, ngā whakawhiti iahiko, ngā aroturuki tauhohenga karihi	Ka tukuna e ngā papa purapura InSb (0.17 eV āputa roopu) te aro ki te aukume tae atu ki te 300%@10 T.

Ngā Painga Matua

Ka tukuna e ngā papa tioata purapura SiC (silicon carbide) he mahi tino pai me te kawe wera 4.9 W/cm·K, te kaha o te mara pakaru 2–4 MV/cm, me te whānui o te āputa roopu 3.2 eV, e āhei ai te whakamahi i te mana teitei, te auau teitei, me te pāmahana teitei. Me te kore kiato paipa iti me te kiato nekehanga <1,000 cm⁻², ka whakarite ēnei papa i te pono i roto i ngā āhuatanga tino kino. Ko tō rātou koretake matū me ngā mata hototahi ki te CVD (Ra <0.2 nm) e tautoko ana i te tipu heteroepitaxial matatau (hei tauira, SiC-on-Si) mō ngā optoelectronics me ngā pūnaha hiko EV.

Ngā Ratonga XKH:

1. Te Hanganga Whakarite

· Ngā Hōputu Angaanga Ngāwari: ngā angaanga 2–12-inihi me ngā tapahi porowhita, tapawhā, tapawhā rite rānei (ātete ±0.01 mm).

· Mana Whakaranu: Te whakaranu tika o te hauota (N) me te konumohe (Al) mā te CVD, ka tutuki ai te ātete mai i te 10⁻³ ki te 10⁶ Ω·cm.

2. Ngā Hangarau Tukanga Matatau'

· Heteroepitaxy: SiC-on-Si (hototahi ki ngā raina silicon 8-inihi) me SiC-on-Diamond (te kawe wera >2,000 W/m·K).

· Whakaiti i te Hapa: Te whakairo me te whakamahana i te hauwai hei whakaiti i ngā hapa o te paipa iti/kiato, hei whakapai ake i te hua o te papa ki te >95%.

3. Ngā Pūnaha Whakahaere Kounga'

· Whakamātautau Mutunga-ki-Mutu: Te tirotiro Raman (manatoko momo-maha), XRD (kirikiri), me te SEM (tātari hapa).

· Ngā Tiwhikete: E tutuki ana i ngā whakaritenga AEC-Q101 (aunoa), JEDEC (JEDEC-033), me MIL-PRF-38534 (taumata hōia).

4. Tautoko i te mekameka tuku taonga o te ao'

· Te Kaha Whakaputa: Putanga ia marama >10,000 ngā wafers (60% 8-inihi), me te tuku ohorere 48-hāora.

· Whatunga Whakahaere: Ka kapi i Ūropi, Amerika Te Raki, me Āhia-Moananui mā te uta rererangi/moana me ngā takai e whakahaeretia ana te pāmahana.

5. Te Whakawhanaketanga Hangarau Ngātahi'

· Ngā Taiwhanga R&D Ngātahi: Te mahi tahi ki te arotau i te takai o te waeine hiko SiC (hei tauira, te whakaurunga o te papa DBC).

· Raihana IP: Te whakarato raihana hangarau tipu epitaxial GaN-on-SiC RF hei whakaiti i ngā utu R&D a te kiritaki.

Whakarāpopototanga

Ko ngā papa tioata purapura SiC (silicon carbide), hei rauemi rautaki, kei te hanga hou i ngā mekameka ahumahi o te ao mā roto i ngā putanga hou i roto i te tipu tioata, te whakahaere hapa, me te whakaurunga kanorau. Mā te whakatairanga tonu i te whakaiti i te hapa wafer, te whakanui ake i te hanga 8-inihi, me te whakawhānui ake i ngā papaaho heteroepitaxial (hei tauira, SiC-on-Diamond), ka tukuna e XKH ngā otinga pono-tiketike, utu-whai hua mō ngā hikohiko optoelectronics, te pūngao hou, me te hanga matatau. Mā tā mātou whakapau kaha ki te auahatanga ka whakarite kia ārahi ngā kiritaki i roto i te kore waro me ngā pūnaha atamai, ka akiaki i te wā e whai ake nei o ngā pūnaha haurua-rahi-awhe whānui.