4inihi te papa SiC Epi mō te MOS, te SBD rānei

Ko te epitaxy e pā ana ki te tipu o tētahi paparanga o ngā rauemi karaihe kotahi kounga teitei ake i runga i te mata o tētahi paparanga silicon carbide. I roto i ēnei, ko te tipu o te paparanga epitaxial gallium nitride i runga i tētahi paparanga silicon carbide haurua-whakamaroke ka kiia he epitaxy heterogeneous; ko te tipu o tētahi paparanga epitaxial silicon carbide i runga i te mata o tētahi paparanga silicon carbide kawe hiko ka kiia he epitaxy homogeneous.

Ko te epitaxial e hangai ana ki ngā whakaritenga hoahoa taputapu o te tipu o te paparanga mahi matua, ko te nuinga o te whakatau ko te mahi a te maramara me te taputapu, ko te utu he 23%. Ko ngā tikanga matua o te epitaxy kiriata angiangi SiC i tēnei wā ko: te whakatakotoranga kohu matū (CVD), te epitaxy kurupae ngota (MBE), te epitaxy wāhanga wai (LPE), me te whakatakotoranga me te whakangawari taiaho pulsed (PLD).

He hononga tino nui te epitaxy i roto i te umanga katoa. Mā te whakatipu i ngā paparanga epitaxial GaN ki runga i ngā paparanga silicon carbide haurua-whakamātao, ka puta ngā paparanga epitaxial GaN i ahu mai i te silicon carbide, ka taea te hanga anō hei taputapu GaN RF pēnei i ngā transistors nekenekehanga irahiko teitei (HEMT);

Mā te whakatipu i te paparanga epitaxial silicon carbide i runga i te paparanga kawe hiko hei hanga i te anga epitaxial silicon carbide, ā, i roto i te paparanga epitaxial i runga i te hanga o ngā diode Schottky, ngā transistors pānga haurua-mara koura-hāora, ngā transistors bipolar kuaha kuaha kuaha kuaha, he tino pānga nui te kounga o te epitaxial ki te mahi a te taputapu ki te whanaketanga o te umanga, ā, he tino hira hoki te mahi.