4 inihi SiC Wafers 6H Semi-Insulating SiC Substrates prime, rangahau, me te reke
Whakatakotoranga Hua
Kōeke | Kore MPD Koeke Whakaputa (Keke Z) | Koeke Whakaputa Paerewa(Keke P) | Kōeke Dummy (Kōeke D) | ||||||||
Diamita | 99.5 mm~100.0 mm | ||||||||||
4H-SI | 500 μm±20 μm | 500 μm±25 μm | |||||||||
Takotoranga Wafer |
Tuaka Weto : 4.0° ki< 1120 > ±0.5° mo te 4H-N, I te tuaka : <0001>±0.5° mo te 4H-SI | ||||||||||
4H-SI | ≤1cm-2 | ≤5 cm-2 | ≤15 cm-2 | ||||||||
4H-SI | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |||||||||
Kaupapa Papatahi Tuatahi | {10-10} ±5.0° | ||||||||||
Te Roa Papatahi Tuatahi | 32.5 mm±2.0 mm | ||||||||||
Te Roa Papatahi Tuarua | 18.0 mm±2.0 mm | ||||||||||
Takotoranga Papatahi Tuarua | Silicon kanohi ki runga: 90° CW. mai i Prime flat ±5.0° | ||||||||||
Whakakorenga Tapa | 3 mm | ||||||||||
LTV/TTV/Kopere/Warp | ≤3 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||||||||
Te taratara | C kanohi | Porohia | Ra≤1 nm | ||||||||
Ko te kanohi | CMP | Ra≤0.2 nm | Ra≤0.5 nm | ||||||||
Nga Kapiti Tapa Na Te Maama Nui | Karekau | Te roa whakaemi ≤ 10 mm, kotahi roa≤2 mm | |||||||||
Nga Pereti Hex Na Te Maama Nui | Horahanga whakahiato ≤0.05% | Horahanga whakahiato ≤0.1% | |||||||||
Nga Waahanga Polytype Ma te Maama Maama Nui | Karekau | Horahanga whakahiato≤3% | |||||||||
Nga Whakauru Wao Ataata | Horahanga whakahiato ≤0.05% | Horahanga whakahiato ≤3% | |||||||||
Nga Rakuraku o te Mata Silicon Na Te Maama Nui | Karekau | Roa whakahiato≤1*diamita angiangi | |||||||||
Ko nga maramara Tapa Teitei Ma te Maama Kaha | Kore e whakaaetia ≥0.2 mm te whanui me te hohonu | 5 whakaaetia, ≤1 mm ia | |||||||||
Ko te Whakakinotanga o te Mata Silicon Na te Kaha Teitei | Karekau | ||||||||||
Te takai | Ripene Angiangi-maha, Ipu Angiangi Kotahi ranei |
Hoahoa Taipitopito
Tuhia to korero ki konei ka tukuna mai ki a matou